Nanotech 2003 Vol. 2
Nanotech 2003 Vol. 2
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2

Compact Modeling Chapter 7

A Physics-Based Compact Model for Nano-Scale DG and FD/SOI MOSFETs

Authors: J. Fossum, L. Ge and M-H Chiang

Affilation: University of Florida, United States

Pages: 274 - 277

Keywords: compact model, predictive circuit simulation, nano-scale CMOS, DG MOSFET, FD/SOI MOSFET

Abstract:
A process/physics-based compact model (UFDG) for double-gate (DG) MOSFETs is overviewed. The model, in essence, is a compact Poisson-Schrödinger solver, including accountings for short-channel effects, and is applicable to nano-scale fully depleted (FD) SOI MOSFETs as well as generic DG devices in ultra-thin Si films. The utility of UFDG is demonstrated by using it in Spice3 to design and characterize thin Si-film MOSFETs and to project extremely scaled DG and FD/SOI CMOS performances.

A Physics-Based Compact Model for Nano-Scale DG and FD/SOI MOSFETs

ISBN: 0-9728422-1-7
Pages: 600