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 | Nanotech 2003 Vol. 2
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2
Chapter 7: Compact Modeling |
| | A Physics-Based Compact Model for Nano-Scale DG and FD/SOI MOSFETs | | Authors: | J. Fossum, L. Ge and M-H Chiang | | Affilation: | University of Florida, US | | Pages: | 274 - 277 | | Keywords: | compact model, predictive circuit simulation, nano-scale CMOS, DG MOSFET, FD/SOI MOSFET | | Abstract: | A process/physics-based compact model (UFDG) for double-gate (DG) MOSFETs is overviewed. The model, in essence, is a compact Poisson-Schrödinger solver, including accountings for short-channel effects, and is applicable to nano-scale fully depleted (FD) SOI MOSFETs as well as generic DG devices in ultra-thin Si films. The utility of UFDG is demonstrated by using it in Spice3 to design and characterize thin Si-film MOSFETs and to project extremely scaled DG and FD/SOI CMOS performances. |  | View paper | | ISBN: | 0-9728422-1-7 |
| Pages: | 600 |
| Hardcopy: | $125.00 |
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