| |
 | Nanotech 2003 Vol. 2
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2
Chapter 7: Compact Modeling |
| | A Framework for Generic Physics Based Double-Gate MOSFET Modeling | | Authors: | M. Chan, Y. Taur, C.H. Lin, J. He, A. Niknejad and C. Hu | | Affilation: | Hong Kong University of Science & Technology, HK | | Pages: | 270 - 273 | | Keywords: | CMOS device, double-gate MOSFET, circuit simulation, device model, SPICE, BSIM | | Abstract: | This paper presents a framework to develop a generic and physical Double-Gate MOSFET model. Due to limited available physical data and existence of a large variety of device structures, flexibility to assemble model modules to accommodate different device structures takes a much high precedence compared with conventional modeling approaches. In addition, detail device physics based on 2-D and even 3-D analysis at very small dimensions have to be incorporated to describe the device operation accurately. A flexible quasi-Femi potential core model is described to achieve both physical accuracy and extendibility. |  | View paper | | ISBN: | 0-9728422-1-7 |
| Pages: | 600 |
| Hardcopy: | $125.00 |
| Special: | 3 CD Set — 15% off with Free Shipping |
| Up | |
|
| nanoPRwire™ |
 |
| News Headlines |
 |
|
|
| |
| |
|
| | |
| |
|
|
