A Framework for Generic Physics Based Double-Gate MOSFET Modeling

	Nanotech 2003 Vol. 2 Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2 Chapter 7: Compact Modeling
	A Framework for Generic Physics Based Double-Gate MOSFET Modeling
Authors:	M. Chan, Y. Taur, C.H. Lin, J. He, A. Niknejad and C. Hu
Affilation:	Hong Kong University of Science & Technology, HK
Pages:	270 - 273
Keywords:	CMOS device, double-gate MOSFET, circuit simulation, device model, SPICE, BSIM
Abstract:	This paper presents a framework to develop a generic and physical Double-Gate MOSFET model. Due to limited available physical data and existence of a large variety of device structures, flexibility to assemble model modules to accommodate different device structures takes a much high precedence compared with conventional modeling approaches. In addition, detail device physics based on 2-D and even 3-D analysis at very small dimensions have to be incorporated to describe the device operation accurately. A flexible quasi-Femi potential core model is described to achieve both physical accuracy and extendibility.
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ISBN:	0-9728422-1-7
Pages:	600
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