| |
 | Nanotech 2003 Vol. 2
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2
Chapter 7: Compact Modeling |
| | A Technology-based Compact Model for Predictive Deep-Submicron MOSFET Modeling and Characterization | | Authors: | X. Zhou, S.B. Chiah and K.Y. Lim | | Affilation: | Nanyang Technological University, SG | | Pages: | 266 - 269 | | Keywords: | compact model, deep-submicron MOSFETs, scalability, symmetry, technology development | | Abstract: | This paper presents new development results of our compact model (Xsim) for deep-submicron MOSFETs. Although a threshold-voltage-based and source-referenced regional model, Xsim meets the basic requirements of continuity (to third-order derivatives), scalability (entire geometry range), and symmetry, with a single-piece unified equation that approaches the ideal long-side-channel expression. Model calibration requires minimum measurement data with one-iteration parameter extraction, which can be extrapolated to predicting characteristics of extremely-scaled devices with severe threshold voltage roll-off, a regime in which most common models do not (or cannot) model. |  | View paper | | ISBN: | 0-9728422-1-7 |
| Pages: | 600 |
| Hardcopy: | $125.00 |
| Special: | 3 CD Set — 15% off with Free Shipping |
| Up | |
|
| nanoPRwire™ |
 |
| News Headlines |
 |
|
|
| |
| |
|
| | |
| |
|
|
