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 | Nanotech 2003 Vol. 2
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2
Chapter 7: Compact Modeling |
| | HiSIM: Accurate Charge Modeling Important for RF Era | | Authors: | M. Miura-Mattausch, D. Navarro, H. Ueno, H.J. Mattausch, K. Morikawa, S. Itoh, A. Kobayashi and H. Masuda | | Affilation: | Hiroshima University, JP | | Pages: | 258 - 261 | | Keywords: | MOSFET model, surface potential, charge-based modeling, sub-100nm technology | | Abstract: | Extension of the gradual-channel approximation is presented with the surface-potential-based MOSFET modeling. All phenomena observed under the saturation condition are described by the potential increase in the pinch-off region in a self-consistent way. The charge induced by the high lateral electric field is demonstrated to become a major contributing factor in the charge distribution of small-size MOSFETs, instead of the conventional intrinsic part. This changes the charge partitioning of the inversion charge, which changes the high-frequency response of small-size MOSFETs as well. |  | View paper | | ISBN: | 0-9728422-1-7 |
| Pages: | 600 |
| Hardcopy: | $125.00 |
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