Nano Science and Technology Institute
Nanotech 2003 Vol. 2
Nanotech 2003 Vol. 2
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2
Chapter 7: Compact Modeling

A Basic Property of MOS Transistors and its Circuit Implications

Authors:E. Vittoz, C. Enz and F. Krummenacher
Affilation:Swiss Center for Electronics & Microtechnology, CH
Pages:246 - 249
Keywords:MOS transistor, superposition, symmetry, current mode
Abstract:The MOS transistor drain current is the (linear) superposition of independent and symmetrical effects of source and drain voltages. This basic property is not affected by the geometry or symmetry of the transistor, by the level of gate voltage or by narrow channel effects. However, it progressively deteriorates when the channel is shortened. Except in weak inversion, it is also degraded by structural non-homogeneities along the channel. This property can be exploited by means of the concept of pseudo-resistors to implement transistor-only linear circuits in the current domain.
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