Nanotech 2003 Vol. 2
Nanotech 2003 Vol. 2
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2

Compact Modeling Chapter 7

Implications of Gate Tunneling and Quantum Effects in the Gate-Channel Stack

Authors: R. Dutton and C-H Choi

Affilation: Stanford University, United States

Pages: 242 - 245

Keywords: gate tunneling, DG SOI, quantum effect, CV

Abstract:
Simulation and modeling of gate tunneling current for thin-oxide MOSFETs and Double-Gate SOIs are discussed. Guidelines for design of leady MOS capacitors are proposed. Resonant gate tunneling current in DG SOI is simulated, based on quantum-mechanical models, and shown to be an issue of growing concern.

Implications of Gate Tunneling and Quantum Effects in the Gate-Channel Stack

ISBN: 0-9728422-1-7
Pages: 600