Nano Science and Technology Institute
Nanotech 2003 Vol. 2
Nanotech 2003 Vol. 2
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2
 
Chapter 7: Compact Modeling
 

Implications of Gate Tunneling and Quantum Effects in the Gate-Channel Stack

Authors:R. Dutton and C-H Choi
Affilation:Stanford University, US
Pages:242 - 245
Keywords:gate tunneling, DG SOI, quantum effect, CV
Abstract:Simulation and modeling of gate tunneling current for thin-oxide MOSFETs and Double-Gate SOIs are discussed. Guidelines for design of leady MOS capacitors are proposed. Resonant gate tunneling current in DG SOI is simulated, based on quantum-mechanical models, and shown to be an issue of growing concern.
Implications of Gate Tunneling and Quantum Effects in the Gate-Channel StackView PDF of paper
ISBN:0-9728422-1-7
Pages:600
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