Implications of Gate Tunneling and Quantum Effects in the Gate-Channel Stack
Authors:
R. Dutton and C-H Choi
Affilation:
Stanford University, US
Pages:
242 - 245
Keywords:
gate tunneling, DG SOI, quantum effect, CV
Abstract:
Simulation and modeling of gate tunneling current for thin-oxide MOSFETs and Double-Gate SOIs are discussed. Guidelines for design of leady MOS capacitors are proposed. Resonant gate tunneling current in DG SOI is simulated, based on quantum-mechanical models, and shown to be an issue of growing concern.
