Nanotech 2003 Vol. 2
Nanotech 2003 Vol. 2
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2

Quantum Effects, Quantum Devices and Spintronics Chapter 5

Threshold Voltage Shifts in Narrow-Width SOI Devices Due to Quantum Mechanical Size-Quantization Effects

Authors: S.S. Ahmed and D. Vasileska

Affilation: Arizona State University, United States

Pages: 222 - 225

Keywords: SOI devices, narrow-channel effects, effective potential, 3D Monte Carlo simulation, threshold voltage shift

Abstract:
We investigate the role of quantum-mechanical size-quantization effects in narrow-width SOI devices. In these structures, carriers experience a two dimensional confinement in a square quantum well at the semiconductor-oxide interface. This results not only in a significant increase in the threshold voltage but also in its pronounced channel width dependency. We use the effective potential approach in conjunction with a 3D MC particle-based simulator. We find ~300 mV shift in the threshold voltage that depends on the channel width and gives rise to approximately 40% degradation of the on-state current.

Threshold Voltage Shifts in Narrow-Width SOI Devices Due to Quantum Mechanical Size-Quantization Effects

ISBN: 0-9728422-1-7
Pages: 600