Authors: S.S. Ahmed and D. Vasileska
Affilation: Arizona State University, United States
Pages: 222 - 225
Keywords: SOI devices, narrow-channel effects, effective potential, 3D Monte Carlo simulation, threshold voltage shift
We investigate the role of quantum-mechanical size-quantization effects in narrow-width SOI devices. In these structures, carriers experience a two dimensional confinement in a square quantum well at the semiconductor-oxide interface. This results not only in a significant increase in the threshold voltage but also in its pronounced channel width dependency. We use the effective potential approach in conjunction with a 3D MC particle-based simulator. We find ~300 mV shift in the threshold voltage that depends on the channel width and gives rise to approximately 40% degradation of the on-state current.