Nano Science and Technology Institute
Nanotech 2003 Vol. 2
Nanotech 2003 Vol. 2
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2
 
Chapter 5: Quantum Effects, Quantum Devices and Spintronics
 

Threshold Voltage Shifts in Narrow-Width SOI Devices Due to Quantum Mechanical Size-Quantization Effects

Authors:S.S. Ahmed and D. Vasileska
Affilation:Arizona State University, US
Pages:222 - 225
Keywords:SOI devices, narrow-channel effects, effective potential, 3D Monte Carlo simulation, threshold voltage shift
Abstract:We investigate the role of quantum-mechanical size-quantization effects in narrow-width SOI devices. In these structures, carriers experience a two dimensional confinement in a square quantum well at the semiconductor-oxide interface. This results not only in a significant increase in the threshold voltage but also in its pronounced channel width dependency. We use the effective potential approach in conjunction with a 3D MC particle-based simulator. We find ~300 mV shift in the threshold voltage that depends on the channel width and gives rise to approximately 40% degradation of the on-state current.
Threshold Voltage Shifts in Narrow-Width SOI Devices Due to Quantum Mechanical Size-Quantization EffectsView PDF of paper
ISBN:0-9728422-1-7
Pages:600
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