Nano Science and Technology Institute
Nanotech 2003 Vol. 2
Nanotech 2003 Vol. 2
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2
 
Chapter 5: Quantum Effects, Quantum Devices and Spintronics
 

Direct Source to Drain Tunnelling and its Impact on the Intrinsic Parameter Fluctuations in Nanometer Scale Double Gate MOSFETs

Authors:J.R. Watling, A. Asenov, A.R. Brown, A. Svizhenko and M.P. Anantram
Affilation:University of Glasgow, UK
Pages:202 - 205
Keywords:double gate MOSFET, fluctuations, source-to-drain tunnelling, density gradient
Abstract:We have calibrated quantum density gradient simulator against Non-Equilibrium Greens Functions simulator, to investigate the effect of source-drain tunnelling on intrinsic parameter fluctuations such as line edge roughness, atomistic doping in the source and drain and trapped charge in the undoped channel of sub 10nm double-gate MOSEFTs as require by the Silicon roadmap.
Direct Source to Drain Tunnelling and its Impact on the Intrinsic Parameter Fluctuations in Nanometer Scale Double Gate MOSFETsView PDF of paper
ISBN:0-9728422-1-7
Pages:600
Up
© 2014 Nano Science and Technology Institute. All Rights Reserved.
Terms of Use | Privacy Policy | Contact Us | Site Map