Nanotech 2003 Vol. 2
Nanotech 2003 Vol. 2
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2

Quantum Effects, Quantum Devices and Spintronics Chapter 5

Direct Source to Drain Tunnelling and its Impact on the Intrinsic Parameter Fluctuations in Nanometer Scale Double Gate MOSFETs

Authors: J.R. Watling, A. Asenov, A.R. Brown, A. Svizhenko and M.P. Anantram

Affilation: University of Glasgow, United Kingdom

Pages: 202 - 205

Keywords: double gate MOSFET, fluctuations, source-to-drain tunnelling, density gradient

Abstract:
We have calibrated quantum density gradient simulator against Non-Equilibrium Greens Functions simulator, to investigate the effect of source-drain tunnelling on intrinsic parameter fluctuations such as line edge roughness, atomistic doping in the source and drain and trapped charge in the undoped channel of sub 10nm double-gate MOSEFTs as require by the Silicon roadmap.


ISBN: 0-9728422-1-7
Pages: 600

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