Authors: J.R. Watling, A. Asenov, A.R. Brown, A. Svizhenko and M.P. Anantram
Affilation: University of Glasgow, United Kingdom
Pages: 202 - 205
Keywords: double gate MOSFET, fluctuations, source-to-drain tunnelling, density gradient
We have calibrated quantum density gradient simulator against Non-Equilibrium Greens Functions simulator, to investigate the effect of source-drain tunnelling on intrinsic parameter fluctuations such as line edge roughness, atomistic doping in the source and drain and trapped charge in the undoped channel of sub 10nm double-gate MOSEFTs as require by the Silicon roadmap.