Direct Source to Drain Tunnelling and its Impact on the Intrinsic Parameter Fluctuations in Nanometer Scale Double Gate MOSFETs

	Nanotech 2003 Vol. 2 Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2 Chapter 5: Quantum Effects, Quantum Devices and Spintronics
	Direct Source to Drain Tunnelling and its Impact on the Intrinsic Parameter Fluctuations in Nanometer Scale Double Gate MOSFETs
Authors:	J.R. Watling, A. Asenov, A.R. Brown, A. Svizhenko and M.P. Anantram
Affilation:	University of Glasgow, UK
Pages:	202 - 205
Keywords:	double gate MOSFET, fluctuations, source-to-drain tunnelling, density gradient
Abstract:	We have calibrated quantum density gradient simulator against Non-Equilibrium Greens Functions simulator, to investigate the effect of source-drain tunnelling on intrinsic parameter fluctuations such as line edge roughness, atomistic doping in the source and drain and trapped charge in the undoped channel of sub 10nm double-gate MOSEFTs as require by the Silicon roadmap.
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ISBN:	0-9728422-1-7
Pages:	600
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