Nanotech 2003 Vol. 2
Nanotech 2003 Vol. 2
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2

Quantum Effects, Quantum Devices and Spintronics Chapter 5

Transition of the Ground State in a Coupled N-layer Quantum Dot

Authors: W. Xie

Affilation: Guangzhou University, China

Pages: 157 - 159

Keywords: quantum dot

There has been growing interest in the physics of quantum dots (QDs) in recent years because of the rapid development of fabrication technology. Most theoretical and experimental studies have been so far focused on the electronic structure of a single disc-like QD. Recently, a coupled QD that could be considered as an artificial molecule has attracted much attention. In contrast to the single disc-like QD, one must consider another degree of freedom along the growth direction for a vertically coupled QD. The main feature in this system is the effects of dot-dot and electron-electron interactions on the electronic structure. However, most of previous work has focused on double-layer QD systems, and only few works related to the multiple QD systems. We propose in this paper a procedure of exact diagonalization to study N-layer QDs. The low-lying energy levels as well as the ground state electronic structure are calculated systematically as a function of magnetic fields of arbitrary strength.

Transition of the Ground State in a Coupled N-layer Quantum Dot

ISBN: 0-9728422-1-7
Pages: 600