Nano Science and Technology Institute
Nanotech 2003 Vol. 2
Nanotech 2003 Vol. 2
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2
 
Chapter 4: Nano Electronics
 

Background Charge Insensitive Single-Electron Memory Devices

Authors:K. Yadavalli, A. Orlov, G. Snider, K. Likharev and A. Korotkov
Affilation:University of Notre Dame, US
Pages:141 - 144
Keywords:single-electron memory, Nordheim-Fowler tunneling
Abstract:In a Single-Electron Memory Cell (SEMC) one bit of information is represented by the excess or shortfall of a small (¡_1) number of electrons on the floating gate (FG). We present experimental results on the all-metallic FG memory devices fabricated using aluminum tunnel junction technology [3] with variable barrier separating FG and its control gate (CG). We report the operation of SEMC in one electron mode.Experimental results are compared with calculations and a very good match is observed. We discuss several regimes of SEMC operation and various methods to improve the performance of this type of memory.
Background Charge Insensitive Single-Electron Memory DevicesView PDF of paper
ISBN:0-9728422-1-7
Pages:600
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