Nanotech 2003 Vol. 2
Nanotech 2003 Vol. 2
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2

Nano Electronics Chapter 4

Background Charge Insensitive Single-Electron Memory Devices

Authors: K. Yadavalli, A. Orlov, G. Snider, K. Likharev and A. Korotkov

Affilation: University of Notre Dame, United States

Pages: 141 - 144

Keywords: single-electron memory, Nordheim-Fowler tunneling

In a Single-Electron Memory Cell (SEMC) one bit of information is represented by the excess or shortfall of a small (¡_1) number of electrons on the floating gate (FG). We present experimental results on the all-metallic FG memory devices fabricated using aluminum tunnel junction technology [3] with variable barrier separating FG and its control gate (CG). We report the operation of SEMC in one electron mode.Experimental results are compared with calculations and a very good match is observed. We discuss several regimes of SEMC operation and various methods to improve the performance of this type of memory.

Background Charge Insensitive Single-Electron Memory Devices

ISBN: 0-9728422-1-7
Pages: 600