Nanotech 2003 Vol. 2
Nanotech 2003 Vol. 2
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2

Nano Electronics Chapter 4

Three-dimensional, Full-band, Quantum Modeling of Electron and Hole Transport Through Si/SiGe Nano-structures

Authors: C. Rivas and R. Lake

Affilation: University of California, United States

Pages: 137 - 140

Keywords: Si, nanowire, full-band, computational nanoelectronics

Abstract:
Full-band, three-dimensional (3D), atomistic, non-equilibrium Green fuction simulations are used to model Si nanowires. Full-band and single band calculations are compared. The effect of surface passivation is analyzed in the full-band simulations. Our approach to the difficult modeling issues is discussed.

Three-dimensional, Full-band, Quantum Modeling of Electron and Hole Transport Through Si/SiGe Nano-structures

ISBN: 0-9728422-1-7
Pages: 600