Three-dimensional, Full-band, Quantum Modeling of Electron and Hole Transport Through Si/SiGe Nano-structures

	Nanotech 2003 Vol. 2 Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2 Chapter 4: Nano Electronics
	Three-dimensional, Full-band, Quantum Modeling of Electron and Hole Transport Through Si/SiGe Nano-structures
Authors:	C. Rivas and R. Lake
Affilation:	University of California, US
Pages:	137 - 140
Keywords:	Si, nanowire, full-band, computational nanoelectronics
Abstract:	Full-band, three-dimensional (3D), atomistic, non-equilibrium Green fuction simulations are used to model Si nanowires. Full-band and single band calculations are compared. The effect of surface passivation is analyzed in the full-band simulations. Our approach to the difficult modeling issues is discussed.
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ISBN:	0-9728422-1-7
Pages:	600
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