Nanotech 2003 Vol. 2
Nanotech 2003 Vol. 2
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2

Nano Scale Device Modeling Chapter 3

Merging Atomistic and Continuum Simulations of Silicon Technology - The Best from the Two Worlds

Authors: P. Pichler

Affilation: Fraunhofer Institute for Integrated Circuits, Germany

Pages: 133 - 136

Keywords: process simulation, continuum simulation, atomistic simulation, silicon

Abstract:
Simulation of diffusion processes during front-end silicon process stepes needs to address a variety of highly complicated phenomena. In industrial environments, such simulations are nearly entirely based on continuum approaches. The physics entering into the models, on the other hand, is based on atomistic concepts and benefits considerably from the atomistic simulation capabilities developed until now. The goal of the paper is to highlight the interplay of the methods as well as their specific advantages and limitations.

Merging Atomistic and Continuum Simulations of Silicon Technology - The Best from the Two Worlds

ISBN: 0-9728422-1-7
Pages: 600