Authors: M. Hane, T. Ezaki and T. Ikezawa
Affilation: NEC Corporation, Japan
Pages: 125 - 128
Keywords: process simulation, device simulation, TCAD, Monte Carlo, atomistic simulation
We studied sophisticated shallow junction fabrication processes, i.e. spike-annealing and flash-lamp annealing, using our recently developed atomistic dopant diffusion simulator. Through its use of kinetic Monte Carlo procedure, considering all the possible charged species and Fermi-level effects on drift diffusion and clustering reactions, and through boron diffusion and activation kinetics obtained through ab-initio calculation incorporated into it, this simulator can reproduce various spike anneal experiments without any arbitrary parameter fitting. The simulator also enables us to calculate three dimensional dopant atom distribution for actual sub-100nm MOSFETs. By coupling three-dimensional atomistic process and device simulator, we were able to perform statistical simulation to evaluate the intrinsic fluctuation induced by the discrete dopant atoms.