Nano Science and Technology Institute
Nanotech 2003 Vol. 2
Nanotech 2003 Vol. 2
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2
Chapter 12: Computational Methods and Numerics

A Novel Grid Adaptation Procedure for Stationary 2D Device Simulation

Authors:B. Schmithusen, K. Gartner and W. Fichtner
Affilation:Integrated Systems Laboratory, ETHZ, CH
Pages:504 - 507
Keywords:device simulation, grid adaptation, dissipation rate, error estimation, anisotropic refinement, homotopy technique
Abstract:A novel anisotropic grid adaptation procedure for the stationary 2D drift-diffusion model in semiconductor device simulation is presented. The adaptation approach is based on the principle of equidistributing local dissipation rate errors and suitable for the Scharfetter-Gummel box method discretization on quad-tree based boundary Delaunay grids. In analogy to standard a posteriori error estimation techniques new error indicators are proposed and a novel iterative recomputation procedure is developed for robust adaptive simulations.
A Novel Grid Adaptation Procedure for Stationary 2D Device SimulationView PDF of paper
© 2017 Nano Science and Technology Institute. All Rights Reserved.
Terms of Use | Privacy Policy | Contact Us | Site Map