Nanotech 2003 Vol. 2
Nanotech 2003 Vol. 2
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2

Computational Methods and Numerics Chapter 12

A Novel Grid Adaptation Procedure for Stationary 2D Device Simulation

Authors: B. Schmithusen, K. Gartner and W. Fichtner

Affilation: Integrated Systems Laboratory, ETHZ, Switzerland

Pages: 504 - 507

Keywords: device simulation, grid adaptation, dissipation rate, error estimation, anisotropic refinement, homotopy technique

Abstract:
A novel anisotropic grid adaptation procedure for the stationary 2D drift-diffusion model in semiconductor device simulation is presented. The adaptation approach is based on the principle of equidistributing local dissipation rate errors and suitable for the Scharfetter-Gummel box method discretization on quad-tree based boundary Delaunay grids. In analogy to standard a posteriori error estimation techniques new error indicators are proposed and a novel iterative recomputation procedure is developed for robust adaptive simulations.

A Novel Grid Adaptation Procedure for Stationary 2D Device Simulation

ISBN: 0-9728422-1-7
Pages: 600