Authors: B. Schmithusen, K. Gartner and W. Fichtner
Affilation: Integrated Systems Laboratory, ETHZ, Switzerland
Pages: 504 - 507
Keywords: device simulation, grid adaptation, dissipation rate, error estimation, anisotropic refinement, homotopy technique
A novel anisotropic grid adaptation procedure for the stationary 2D drift-diffusion model in semiconductor device simulation is presented. The adaptation approach is based on the principle of equidistributing local dissipation rate errors and suitable for the Scharfetter-Gummel box method discretization on quad-tree based boundary Delaunay grids. In analogy to standard a posteriori error estimation techniques new error indicators are proposed and a novel iterative recomputation procedure is developed for robust adaptive simulations.