 | Nanotech 2003 Vol. 2
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2
Chapter 12: Computational Methods and Numerics |
A Novel Grid Adaptation Procedure for Stationary 2D Device Simulation | |
| Authors: | B. Schmithusen, K. Gartner and W. Fichtner |
| Affilation: | Integrated Systems Laboratory, ETHZ, CH |
| Pages: | 504 - 507 |
| Keywords: | device simulation, grid adaptation, dissipation rate, error estimation, anisotropic refinement, homotopy technique |
| Abstract: | A novel anisotropic grid adaptation procedure for the stationary 2D drift-diffusion model in semiconductor device simulation is presented. The adaptation approach is based on the principle of equidistributing local dissipation rate errors and suitable for the Scharfetter-Gummel box method discretization on quad-tree based boundary Delaunay grids. In analogy to standard a posteriori error estimation techniques new error indicators are proposed and a novel iterative recomputation procedure is developed for robust adaptive simulations. |
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| ISBN: | 0-9728422-1-7 |
| Pages: | 600 |
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