Nano Science and Technology Institute
Nanotech 2003 Vol. 2
Nanotech 2003 Vol. 2
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2
Chapter 12: Computational Methods and Numerics

A Fully Coulpled Computational Model of the Silylation Process

Authors:W.S. Winters, G.H. Evans, V.C. Prantil and R.S. Larson
Affilation:Sandia National Laboratories, US
Pages:578 - 581
Keywords:EUVL, TSI, FEM, diffusion, silylation
Abstract:This paper describes a fully coupled computational model of the positive tone silylation process. The model is two-dimensional and transient and focuses on the part of the lithography process in which crosslinked and uncrosslinked resist is exposed to a gaseous silylation agent. The model accounts for the combined effects of mass transport, chemical reaction, the generation of stresses, and the resulting material motion. The influence of stress on diffusion and reaction rates is also included. Both Fickian and case II diffusion models have been incorporated. A complete 2D transient simulation of the silylation process is presented and discussed.
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