Authors: A. Gehring, T. Grasser, H. Kosina and S. Selberherr
Affilation: Institute for Microelectronics, Vienna, Austria
Pages: 48 - 51
Keywords: tunneling, simulation, non-Maxwellian
We report on a new formulation for the description of hot electron tunneling through dielectrics. It is based on an expression which accounts for the non-Maxwellian shape of the electron energy distribution function (EED) and exactly reproduces its first three even moments n, Tn, and beta. Here we present a simplified model applicable within the framework of the energy-transport model which only provides n and Tn. Simulation results of long channel EEPROM devices and short channel MOSFETs are presented which show excellent agreement with Monte Carlo results and measurements.