An Energy Transport Gate Current Model Accounting for a Non-Maxwellian Energy Distribution

	Nanotech 2003 Vol. 2 Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2 Chapter 1: Semiconductors
	An Energy Transport Gate Current Model Accounting for a Non-Maxwellian Energy Distribution
Authors:	A. Gehring, T. Grasser, H. Kosina and S. Selberherr
Affilation:	Institute for Microelectronics, Vienna, AT
Pages:	48 - 51
Keywords:	tunneling, simulation, non-Maxwellian
Abstract:	We report on a new formulation for the description of hot electron tunneling through dielectrics. It is based on an expression which accounts for the non-Maxwellian shape of the electron energy distribution function (EED) and exactly reproduces its first three even moments n, Tn, and beta. Here we present a simplified model applicable within the framework of the energy-transport model which only provides n and Tn. Simulation results of long channel EEPROM devices and short channel MOSFETs are presented which show excellent agreement with Monte Carlo results and measurements.
	View PDF of paper
ISBN:	0-9728422-1-7
Pages:	600
Special:	3 CD Set — 15% off with Free Shipping
Up