Nanotech 2003 Vol. 2
Nanotech 2003 Vol. 2
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2

Semiconductors Chapter 1

An Energy Transport Gate Current Model Accounting for a Non-Maxwellian Energy Distribution

Authors: A. Gehring, T. Grasser, H. Kosina and S. Selberherr

Affilation: Institute for Microelectronics, Vienna, Austria

Pages: 48 - 51

Keywords: tunneling, simulation, non-Maxwellian

Abstract:
We report on a new formulation for the description of hot electron tunneling through dielectrics. It is based on an expression which accounts for the non-Maxwellian shape of the electron energy distribution function (EED) and exactly reproduces its first three even moments n, Tn, and beta. Here we present a simplified model applicable within the framework of the energy-transport model which only provides n and Tn. Simulation results of long channel EEPROM devices and short channel MOSFETs are presented which show excellent agreement with Monte Carlo results and measurements.

An Energy Transport Gate Current Model Accounting for a Non-Maxwellian Energy Distribution

ISBN: 0-9728422-1-7
Pages: 600