Nanotech 2003 Vol. 2
Nanotech 2003 Vol. 2
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2

Semiconductors Chapter 1

Semi-Analytic Boltzmann Model for the Substrate Current of Short-Channel MOSFETs with Lightly Doped Drains

Authors: H.C. Morris and M.M. De Pass

Affilation: San Jose State University, United States

Pages: 24 - 27

Keywords: Boltzmann equation, lightly doped drain, impact ionization, substrate current

Abstract:
As MOSFET sizes have been reduced to nano-scale dimensions, existing models of device behavior, such as the drift diffusion equations, cease to be valid. In the nano domain, more fundamental equations, such as the Boltzmann equation and its quantum analogs, must be utilized. This paper presents a new technique for obtaining practical formulae for the impact ionization (I.I.) generation rate Gii in ultra-short-channel Lightly Doped Drain (LDD) MOSFETs. We present relevant new formulae for the substrate current Isub that can be compared with empirical data and utilized in SPICE-type simulations.

Semi-Analytic Boltzmann Model for the Substrate Current of Short-Channel MOSFETs with Lightly Doped Drains

ISBN: 0-9728422-1-7
Pages: 600