Lateral-Cavity Design for Long-Wavelength Vertical-Cavity Lasers

	Nanotech 2003 Vol. 2 Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2 Chapter 1: Semiconductors
	Lateral-Cavity Design for Long-Wavelength Vertical-Cavity Lasers
Authors:	J. Piprek, A. Bregy, V. Jayaraman, Y-J Chiu and J. Bowers
Affilation:	University of California, US
Pages:	20 - 23
Keywords:	semiconductor laser, quantum device, electrical-thermal-optical simulation
Abstract:	For more than a decade, long-wavelength vertical-cavity lasers (VCLs) for fiber-optic applications are subject of intense research efforts. GaAs-based VCLs emitting at shorter wavelength (0.85-micron) have been commercialized successfully, however, the challenge of transferring this technology to 1.3 and 1.55-micron wavelength is often underestimated. Several VCL design concepts are currently competing to meet telecommunication specifications. One of the main problems is the demonstration of high-power single-optical-mode operation at elevated ambient temperature. Both mode and temperature stability strongly depend on the type of aperture layer used for lateral confinement of the VCL micro-cavity. Our paper presents a comparison of different aperture designs based on advanced quasi-3D numerical device simulation.
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ISBN:	0-9728422-1-7
Pages:	600
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