Nano Science and Technology Institute
Nanotech 2003 Vol. 2
Nanotech 2003 Vol. 2
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2
 
Chapter 1: Semiconductors
 

Modelling of Gain Control in SiGe HBTs and Si Bipolar Transistors by Ge Incorporation in the Polysilicon Emitter

Authors:V.D. Kunz, C.H. de Groot, I.M. Anteney, A.I. Abdul-Rahim, S. Hall, P.L.F. Hemment, Y. Wang and P. Ashburn
Affilation:University of Southampton, UK
Pages:16 - 19
Keywords:polySiGe emitter, bipolar transistor, gain control
Abstract:In SiGe HBTs high values of fT are achieved by using aggressive Ge profiles in the base. A side effect is very high gains, which can lead to a degradation of BVCEO. This paper investigates Ge incorporation in polysilicon emitters to give gain control independent of the base Ge profile. A model is developed illustrating the reduced gain from Ge incorporation and increased gain from the interfacial oxide layer.
Modelling of Gain Control in SiGe HBTs and Si Bipolar Transistors by Ge Incorporation in the Polysilicon EmitterView PDF of paper
ISBN:0-9728422-1-7
Pages:600
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