Nanotech 2003 Vol. 2
Nanotech 2003 Vol. 2
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2

Semiconductors Chapter 1

Modelling of Gain Control in SiGe HBTs and Si Bipolar Transistors by Ge Incorporation in the Polysilicon Emitter

Authors: V.D. Kunz, C.H. de Groot, I.M. Anteney, A.I. Abdul-Rahim, S. Hall, P.L.F. Hemment, Y. Wang and P. Ashburn

Affilation: University of Southampton, United Kingdom

Pages: 16 - 19

Keywords: polySiGe emitter, bipolar transistor, gain control

Abstract:
In SiGe HBTs high values of fT are achieved by using aggressive Ge profiles in the base. A side effect is very high gains, which can lead to a degradation of BVCEO. This paper investigates Ge incorporation in polysilicon emitters to give gain control independent of the base Ge profile. A model is developed illustrating the reduced gain from Ge incorporation and increased gain from the interfacial oxide layer.

Modelling of Gain Control in SiGe HBTs and Si Bipolar Transistors by Ge Incorporation in the Polysilicon Emitter

ISBN: 0-9728422-1-7
Pages: 600