Nano Science and Technology Institute
Nanotech 2003 Vol. 2
Nanotech 2003 Vol. 2
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2
 
Chapter 1: Semiconductors
 

Simulation of Device-Structure Dependence of Surface-Related Kink Phenomena in GaAs FETs

Authors:A. Wakabayashi, Y. Kazami, J. Ozawa, Y. Mitani and K. Horio
Affilation:Shibaura Institute of Technology, JP
Pages:8 - 11
Keywords:GaAs MESFET, kink, surface state, impact ionization
Abstract:Effects of surface states on the kink phenomena in GaAs MESFETs are studied by two-dimensional simulation. It is shown that the kink could arise due to impact ionization of holes and the following hole trapping by the surface states. It is discussed how the surface-related kink phenomena could be weakened, by analyzing a recessed-gate structure and a structure with n+ source region, which are both expected to have less surface-state effects at the source side.
Simulation of Device-Structure Dependence of Surface-Related Kink Phenomena in GaAs FETsView PDF of paper
ISBN:0-9728422-1-7
Pages:600
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