Nanotech 2003 Vol. 2
Nanotech 2003 Vol. 2
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2

Semiconductors Chapter 1

Monte Carlo and Energy Balance Simulations of a Deep Sub-micrometer Conventional and Asymmetric MOSFET Device Structures
A. Mannargudi and D. Vasileska
Arizona State University, US

Single Transistor AND Gate
V. Chengalvala and Y. Zhang
Oklahoma State University, US

Simulation of Device-Structure Dependence of Surface-Related Kink Phenomena in GaAs FETs
A. Wakabayashi, Y. Kazami, J. Ozawa, Y. Mitani and K. Horio
Shibaura Institute of Technology, JP

Nanoscale Control of Light-induced Degradation in Amorphous Silicon
K. Shirai, Y. Yamazaki, H. Katayama-Yoshida
ISIR, Osaka University, JP

Modelling of Gain Control in SiGe HBTs and Si Bipolar Transistors by Ge Incorporation in the Polysilicon Emitter
V.D. Kunz, C.H. de Groot, I.M. Anteney, A.I. Abdul-Rahim, S. Hall, P.L.F. Hemment, Y. Wang and P. Ashburn
University of Southampton, UK

Lateral-Cavity Design for Long-Wavelength Vertical-Cavity Lasers
J. Piprek, A. Bregy, V. Jayaraman, Y-J Chiu and J. Bowers
University of California, US

Semi-Analytic Boltzmann Model for the Substrate Current of Short-Channel MOSFETs with Lightly Doped Drains
H.C. Morris and M.M. De Pass
San Jose State University, US

Fullband Particle-based Simulation of Optical Excitation in Silicon Pin Diodes.
S. Wigger-Aboud, M. Saraniti, S. Goodnick, A. Brodschelm and A. Leitenstorfer
Rush Medical Center and Illinois Institute of Technology, US

A Methodology of Field-Emission Modeling with Space-Charge Effects
T-H Tsai, H-K Tang and Y-J Yang
National Taiwan University, TW

Coupled Multiphysics Modeling of Semiconductor Lasers
Z. Sikorski, Y. Jiang, T. Czyszanowski, A. Przekwas and M. Turowski
CFD Research Corporation, US

A Study on Growth of Ultrathin Silicon Dioxide Films by Rapid Thermal Oxidation
T. Zeng and H.C. Doumanidis
North Carolina State University, US

Optical Characteristics of InAs Quantum Dots influenced by AlGaAs/GaAs Superlattice Barriers
H. Choi, Y. Jeong, Y. Park, J. Lee, J-Y Leem and M. Jeon
Inje University, KR

An Energy Transport Gate Current Model Accounting for a Non-Maxwellian Energy Distribution
A. Gehring, T. Grasser, H. Kosina and S. Selberherr
Institute for Microelectronics, Vienna, AT

Carrier Transit Time Optimization of a High Speed Bipolar Transistor Using Numerical Device Simulation
G.H. Loechelt, J. Sellers, J. Morgan and M. Azam
ON Semiconductor, US

Compatible Hole Channel Mobility and Hole Quantum Correction Models for the TCAD optimization of Nanometer Scale PMOSFETs
C.D. Nguyen, C. Jungemann, B. Neihues, B. Meinerzhagen, J. Sedlmeir and W. Molzer
ITEM-University of Bremen, DE

High Speed Extraction of Process Model Parameters for 70nm Technology using a Distributed Genetic Algorithm
M. Murakawa, Y. Oda, H. Amakawa, S. Baba, T. Higuchi and K. Nishi
AIST, JP


ISBN: 0-9728422-1-7
Pages: 600