 | Nanotech 2003 Vol. 2
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 2
Chapter 1: Semiconductors |
| - | Monte Carlo and Energy Balance Simulations of a Deep Sub-micrometer Conventional and Asymmetric MOSFET Device Structures |
| | A. Mannargudi and D. Vasileska |
| | Arizona State University, US |
| - | Single Transistor AND Gate |
| | V. Chengalvala and Y. Zhang |
| | Oklahoma State University, US |
| - | Simulation of Device-Structure Dependence of Surface-Related Kink Phenomena in GaAs FETs |
| | A. Wakabayashi, Y. Kazami, J. Ozawa, Y. Mitani and K. Horio |
| | Shibaura Institute of Technology, JP |
| - | Nanoscale Control of Light-induced Degradation in Amorphous Silicon |
| | K. Shirai, Y. Yamazaki, H. Katayama-Yoshida |
| | ISIR, Osaka University, JP |
| - | Modelling of Gain Control in SiGe HBTs and Si Bipolar Transistors by Ge Incorporation in the Polysilicon Emitter |
| | V.D. Kunz, C.H. de Groot, I.M. Anteney, A.I. Abdul-Rahim, S. Hall, P.L.F. Hemment, Y. Wang and P. Ashburn |
| | University of Southampton, UK |
| - | Lateral-Cavity Design for Long-Wavelength Vertical-Cavity Lasers |
| | J. Piprek, A. Bregy, V. Jayaraman, Y-J Chiu and J. Bowers |
| | University of California, US |
| - | Semi-Analytic Boltzmann Model for the Substrate Current of Short-Channel MOSFETs with Lightly Doped Drains |
| | H.C. Morris and M.M. De Pass |
| | San Jose State University, US |
| - | Fullband Particle-based Simulation of Optical Excitation in Silicon Pin Diodes. |
| | S. Wigger-Aboud, M. Saraniti, S. Goodnick, A. Brodschelm and A. Leitenstorfer |
| | Rush Medical Center and Illinois Institute of Technology, US |
| - | A Methodology of Field-Emission Modeling with Space-Charge Effects |
| | T-H Tsai, H-K Tang and Y-J Yang |
| | National Taiwan University, TW |
| - | Coupled Multiphysics Modeling of Semiconductor Lasers |
| | Z. Sikorski, Y. Jiang, T. Czyszanowski, A. Przekwas and M. Turowski |
| | CFD Research Corporation, US |
| - | A Study on Growth of Ultrathin Silicon Dioxide Films by Rapid Thermal Oxidation |
| | T. Zeng and H.C. Doumanidis |
| | North Carolina State University, US |
| - | Optical Characteristics of InAs Quantum Dots influenced by AlGaAs/GaAs Superlattice Barriers |
| | H. Choi, Y. Jeong, Y. Park, J. Lee, J-Y Leem and M. Jeon |
| | Inje University, KR |
| - | An Energy Transport Gate Current Model Accounting for a Non-Maxwellian Energy Distribution |
| | A. Gehring, T. Grasser, H. Kosina and S. Selberherr |
| | Institute for Microelectronics, Vienna, AT |
| - | Carrier Transit Time Optimization of a High Speed Bipolar Transistor Using Numerical Device Simulation |
| | G.H. Loechelt, J. Sellers, J. Morgan and M. Azam |
| | ON Semiconductor, US |
| - | Compatible Hole Channel Mobility and Hole Quantum Correction Models for the TCAD optimization of Nanometer Scale PMOSFETs |
| | C.D. Nguyen, C. Jungemann, B. Neihues, B. Meinerzhagen, J. Sedlmeir and W. Molzer |
| | ITEM-University of Bremen, DE |
| - | High Speed Extraction of Process Model Parameters for 70nm Technology using a Distributed Genetic Algorithm |
| | M. Murakawa, Y. Oda, H. Amakawa, S. Baba, T. Higuchi and K. Nishi |
| | AIST, JP |
| - | Monte Carlo and Energy Balance Simulations of a Deep Sub-micrometer Conventional and Asymmetric MOSFET Device Structures |
| | A. Mannargudi and D. Vasileska |
| | Arizona State University, US |
| - | Single Transistor AND Gate |
| | V. Chengalvala and Y. Zhang |
| | Oklahoma State University, US |
| - | Simulation of Device-Structure Dependence of Surface-Related Kink Phenomena in GaAs FETs |
| | A. Wakabayashi, Y. Kazami, J. Ozawa, Y. Mitani and K. Horio |
| | Shibaura Institute of Technology, JP |
| - | Nanoscale Control of Light-induced Degradation in Amorphous Silicon |
| | K. Shirai, Y. Yamazaki, H. Katayama-Yoshida |
| | ISIR, Osaka University, JP |
| - | Modelling of Gain Control in SiGe HBTs and Si Bipolar Transistors by Ge Incorporation in the Polysilicon Emitter |
| | V.D. Kunz, C.H. de Groot, I.M. Anteney, A.I. Abdul-Rahim, S. Hall, P.L.F. Hemment, Y. Wang and P. Ashburn |
| | University of Southampton, UK |
| - | Lateral-Cavity Design for Long-Wavelength Vertical-Cavity Lasers |
| | J. Piprek, A. Bregy, V. Jayaraman, Y-J Chiu and J. Bowers |
| | University of California, US |
| - | Semi-Analytic Boltzmann Model for the Substrate Current of Short-Channel MOSFETs with Lightly Doped Drains |
| | H.C. Morris and M.M. De Pass |
| | San Jose State University, US |
| - | Fullband Particle-based Simulation of Optical Excitation in Silicon Pin Diodes. |
| | S. Wigger-Aboud, M. Saraniti, S. Goodnick, A. Brodschelm and A. Leitenstorfer |
| | Rush Medical Center and Illinois Institute of Technology, US |
| - | A Methodology of Field-Emission Modeling with Space-Charge Effects |
| | T-H Tsai, H-K Tang and Y-J Yang |
| | National Taiwan University, TW |
| - | Coupled Multiphysics Modeling of Semiconductor Lasers |
| | Z. Sikorski, Y. Jiang, T. Czyszanowski, A. Przekwas and M. Turowski |
| | CFD Research Corporation, US |
| - | A Study on Growth of Ultrathin Silicon Dioxide Films by Rapid Thermal Oxidation |
| | T. Zeng and H.C. Doumanidis |
| | North Carolina State University, US |
| - | Optical Characteristics of InAs Quantum Dots influenced by AlGaAs/GaAs Superlattice Barriers |
| | H. Choi, Y. Jeong, Y. Park, J. Lee, J-Y Leem and M. Jeon |
| | Inje University, KR |
| - | An Energy Transport Gate Current Model Accounting for a Non-Maxwellian Energy Distribution |
| | A. Gehring, T. Grasser, H. Kosina and S. Selberherr |
| | Institute for Microelectronics, Vienna, AT |
| - | Carrier Transit Time Optimization of a High Speed Bipolar Transistor Using Numerical Device Simulation |
| | G.H. Loechelt, J. Sellers, J. Morgan and M. Azam |
| | ON Semiconductor, US |
| - | Compatible Hole Channel Mobility and Hole Quantum Correction Models for the TCAD optimization of Nanometer Scale PMOSFETs |
| | C.D. Nguyen, C. Jungemann, B. Neihues, B. Meinerzhagen, J. Sedlmeir and W. Molzer |
| | ITEM-University of Bremen, DE |
| - | High Speed Extraction of Process Model Parameters for 70nm Technology using a Distributed Genetic Algorithm |
| | M. Murakawa, Y. Oda, H. Amakawa, S. Baba, T. Higuchi and K. Nishi |
| | AIST, JP |
| ISBN: | 0-9728422-1-7 |
| Pages: | 600 |
| Hardcopy: | $125.00 |
| Special: | 3 CD Set — 15% off with Free Shipping |
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