Nano Science and Technology Institute
Nanotech 2003 Vol. 1
Nanotech 2003 Vol. 1
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 1
 
Chapter 9: Micro Fluidics
 

A Simple Description of Turn-induced Transverse Field Dispersion in Micrlfluidic Channels for System-Level Design

Authors:R.M. Magargle, J.F. Hoburg and T. Mukherjee
Affilation:Carnegie Mellon University, US
Pages:214 - 217
Keywords:turn, complementary, dispersion, electrokinetic, design
Abstract:This abstract shows a simple analytical model for turn-induced dispersion that captures an essential aspect of the transition field from uniform to circumferential that has been ignored in prior simple descriptions. The model applies directly to the high Peclet number regime, but identifies a new dispersion mechanism that is present in all regimes. The results of this model are compared with numerical simulation and experimental results. Comparisons to previous models show significant differences, almost 300%, in the expected variance for high Peclet complementary turns.
A Simple Description of Turn-induced Transverse Field Dispersion in Micrlfluidic Channels for System-Level DesignView PDF of paper
ISBN:0-9728422-0-9
Pages:560
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