Authors: R.M. Magargle, J.F. Hoburg and T. Mukherjee
Affilation: Carnegie Mellon University, United States
Pages: 214 - 217
Keywords: turn, complementary, dispersion, electrokinetic, design
This abstract shows a simple analytical model for turn-induced dispersion that captures an essential aspect of the transition field from uniform to circumferential that has been ignored in prior simple descriptions. The model applies directly to the high Peclet number regime, but identifies a new dispersion mechanism that is present in all regimes. The results of this model are compared with numerical simulation and experimental results. Comparisons to previous models show significant differences, almost 300%, in the expected variance for high Peclet complementary turns.