Nanotech 2003 Vol. 1
Nanotech 2003 Vol. 1
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 1

Micro Fluidics Chapter 9

A Simple Description of Turn-induced Transverse Field Dispersion in Micrlfluidic Channels for System-Level Design

Authors: R.M. Magargle, J.F. Hoburg and T. Mukherjee

Affilation: Carnegie Mellon University, United States

Pages: 214 - 217

Keywords: turn, complementary, dispersion, electrokinetic, design

Abstract:
This abstract shows a simple analytical model for turn-induced dispersion that captures an essential aspect of the transition field from uniform to circumferential that has been ignored in prior simple descriptions. The model applies directly to the high Peclet number regime, but identifies a new dispersion mechanism that is present in all regimes. The results of this model are compared with numerical simulation and experimental results. Comparisons to previous models show significant differences, almost 300%, in the expected variance for high Peclet complementary turns.

A Simple Description of Turn-induced Transverse Field Dispersion in Micrlfluidic Channels for System-Level Design

ISBN: 0-9728422-0-9
Pages: 560