Nano Science and Technology Institute
Nanotech 2003 Vol. 1
Nanotech 2003 Vol. 1
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 1
 
Chapter 13: Wafer and MEMS Processing
 

Process for Extremely Thin Silicon-on-Insulator Wafer

Authors:A.Y. Usenko, W.N. Carr and B. Chen
Affilation:Silicon Wafer Technologies, Inc., US
Pages:546 - 551
Keywords:SOI, hydrogen, silicon, implantation, platelets, plasma
Abstract:We observe hydrogen platelets buildup into single crystalline silicon caused by hydrogen plasma processing. The platelets are aligned along a layer of lattice defects formed in silicon before plasma processing. The buried defect layer is formed by either silicon-into-silicon or argon-into-silicon implantation. We discuss the platelet nucleation, growth, and merge phenomena, and discuss applicability of the plasma hydrogenation to silicon-on-insulator wafer process of layer transfer type.
Process for Extremely Thin Silicon-on-Insulator WaferView PDF of paper
ISBN:0-9728422-0-9
Pages:560
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