Process for Extremely Thin Silicon-on-Insulator Wafer

	Nanotech 2003 Vol. 1 Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 1 Chapter 13: Wafer and MEMS Processing
	Process for Extremely Thin Silicon-on-Insulator Wafer
Authors:	A.Y. Usenko, W.N. Carr and B. Chen
Affilation:	Silicon Wafer Technologies, Inc., US
Pages:	546 - 551
Keywords:	SOI, hydrogen, silicon, implantation, platelets, plasma
Abstract:	We observe hydrogen platelets buildup into single crystalline silicon caused by hydrogen plasma processing. The platelets are aligned along a layer of lattice defects formed in silicon before plasma processing. The buried defect layer is formed by either silicon-into-silicon or argon-into-silicon implantation. We discuss the platelet nucleation, growth, and merge phenomena, and discuss applicability of the plasma hydrogenation to silicon-on-insulator wafer process of layer transfer type.
	View paper
ISBN:	0-9728422-0-9
Pages:	560
Special:	3 CD Set — 15% off with Free Shipping
Up