Nanotech 2003 Vol. 1
Nanotech 2003 Vol. 1
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 1

Wafer and MEMS Processing Chapter 13

Process for Extremely Thin Silicon-on-Insulator Wafer

Authors: A.Y. Usenko, W.N. Carr and B. Chen

Affilation: Silicon Wafer Technologies, Inc.,, United States

Pages: 546 - 551

Keywords: SOI, hydrogen, silicon, implantation, platelets, plasma

Abstract:
We observe hydrogen platelets buildup into single crystalline silicon caused by hydrogen plasma processing. The platelets are aligned along a layer of lattice defects formed in silicon before plasma processing. The buried defect layer is formed by either silicon-into-silicon or argon-into-silicon implantation. We discuss the platelet nucleation, growth, and merge phenomena, and discuss applicability of the plasma hydrogenation to silicon-on-insulator wafer process of layer transfer type.

Process for Extremely Thin Silicon-on-Insulator Wafer

ISBN: 0-9728422-0-9
Pages: 560