Authors: A.Y. Usenko, W.N. Carr and B. Chen
Affilation: Silicon Wafer Technologies, Inc.,, United States
Pages: 546 - 551
Keywords: SOI, hydrogen, silicon, implantation, platelets, plasma
We observe hydrogen platelets buildup into single crystalline silicon caused by hydrogen plasma processing. The platelets are aligned along a layer of lattice defects formed in silicon before plasma processing. The buried defect layer is formed by either silicon-into-silicon or argon-into-silicon implantation. We discuss the platelet nucleation, growth, and merge phenomena, and discuss applicability of the plasma hydrogenation to silicon-on-insulator wafer process of layer transfer type.