Nano Science and Technology Institute
Nanotech 2003 Vol. 1
Nanotech 2003 Vol. 1
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 1
 
Chapter 13: Wafer and MEMS Processing
 

A Fluoro-ethoxysilane-Based Stiction-Free Release Process for Submicron Gap MEMS

Authors:B. Parvais, A. Pallandre, A.M. Jonas and J-P Raskin
Affilation:Université catholique de Louvain, BE
Pages:522 - 525
Keywords:stiction, SAM, MEMS
Abstract:Nowadays, stiction remains one of the biggest reliability problems in the fabrication of micro-electromechanical systems (MEMS), especially when a small gap is used. To avoid the adhesion, a Self-Assembled Monolayer (SAM) can be coated. Main research in that field focuses on aliphatic chloro-silanes. We developed a novel wet-release CMOS compatible process for the fabrication of surface-micromachined beam using a perfluorated SAM. Uniform 9 Å thick monolayers were observed. A static contact angle of 121° was measured. Furthermore, a complete 1 µm thick (gap 0.5 µm) polysilicon RF MEMS capacitor with aluminium interconnects realized with this process demonstrated the CMOS compatibility.
A Fluoro-ethoxysilane-Based Stiction-Free Release Process for Submicron Gap MEMSView PDF of paper
ISBN:0-9728422-0-9
Pages:560
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