Nanotech 2003 Vol. 1
Nanotech 2003 Vol. 1
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 1

Wafer and MEMS Processing Chapter 13

A Fluoro-ethoxysilane-Based Stiction-Free Release Process for Submicron Gap MEMS

Authors: B. Parvais, A. Pallandre, A.M. Jonas and J-P Raskin

Affilation: Université catholique de Louvain, Belgium

Pages: 522 - 525

Keywords: stiction, SAM, MEMS

Abstract:
Nowadays, stiction remains one of the biggest reliability problems in the fabrication of micro-electromechanical systems (MEMS), especially when a small gap is used. To avoid the adhesion, a Self-Assembled Monolayer (SAM) can be coated. Main research in that field focuses on aliphatic chloro-silanes. We developed a novel wet-release CMOS compatible process for the fabrication of surface-micromachined beam using a perfluorated SAM. Uniform 9 Å thick monolayers were observed. A static contact angle of 121° was measured. Furthermore, a complete 1 µm thick (gap 0.5 µm) polysilicon RF MEMS capacitor with aluminium interconnects realized with this process demonstrated the CMOS compatibility.

A Fluoro-ethoxysilane-Based Stiction-Free Release Process for Submicron Gap MEMS

ISBN: 0-9728422-0-9
Pages: 560