Nano Science and Technology Institute
Nanotech 2003 Vol. 1
Nanotech 2003 Vol. 1
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 1
 
Chapter 11: MEMS Design and Application
 

A Vertical MOSFET for Charge Sensing in the Convex Corner of Si Microchannels

Authors:G. Lim, C-S Park, H-K Lyu, D-S Kim, J-K Shin, P. Choi and M. Lee
Affilation:Kyungpook National University, KP
Pages:444 - 447
Keywords:MOSFET, charge sensing, microchannels, MEMS, thiol DNA
Abstract:In this paper, we will present a vertical MOSFET formed in the convex corner of silicon microchannels which might be useful for detecting charged biomolecules. The cross type microchannels have four MOSFETs and four pairs of source/drain electrodes at each crossing. The non-planar and non-rectangular vertical MOSFET has a effective channel length of 12Î_m and a effective channel width of 9Î_m. Electrical characteristics of the vertical MOSFET were measured at room temperature. The measured I-V characteristics exhibits a typical MOSFET behavior with a threshold voltage of â€1.6V. Variation of drain current with time was also measured when the MOSFET was dipped into the thiol DNA solution. The drain current decreased and was saturated after 5 minutes, which we believe might be due to the change of threshold voltage caused by charged biomolecules adsorbed on the Au gate. In summary, a vertical MOSFET formed in the convex corner of silicon microchannels is presented, which might be useful for detecting charged biomolecules in the biochemical solutions.
A Vertical MOSFET for Charge Sensing in the Convex Corner of Si MicrochannelsView PDF of paper
ISBN:0-9728422-0-9
Pages:560
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