Nanotech 2003 Vol. 1
Nanotech 2003 Vol. 1
Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 1

MEMS Design and Application Chapter 11

A Vertical MOSFET for Charge Sensing in the Convex Corner of Si Microchannels

Authors: G. Lim, C-S Park, H-K Lyu, D-S Kim, J-K Shin, P. Choi and M. Lee

Affilation: Kyungpook National University, North Korea

Pages: 444 - 447

Keywords: MOSFET, charge sensing, microchannels, MEMS, thiol DNA

Abstract:
In this paper, we will present a vertical MOSFET formed in the convex corner of silicon microchannels which might be useful for detecting charged biomolecules. The cross type microchannels have four MOSFETs and four pairs of source/drain electrodes at each crossing. The non-planar and non-rectangular vertical MOSFET has a effective channel length of 12Î_m and a effective channel width of 9Î_m. Electrical characteristics of the vertical MOSFET were measured at room temperature. The measured I-V characteristics exhibits a typical MOSFET behavior with a threshold voltage of â€1.6V. Variation of drain current with time was also measured when the MOSFET was dipped into the thiol DNA solution. The drain current decreased and was saturated after 5 minutes, which we believe might be due to the change of threshold voltage caused by charged biomolecules adsorbed on the Au gate. In summary, a vertical MOSFET formed in the convex corner of silicon microchannels is presented, which might be useful for detecting charged biomolecules in the biochemical solutions.

A Vertical MOSFET for Charge Sensing in the Convex Corner of Si Microchannels

ISBN: 0-9728422-0-9
Pages: 560