Design and fabrication of an integrated CMOS-MEMS 3-axis accelerometer

	Nanotech 2003 Vol. 1 Technical Proceedings of the 2003 Nanotechnology Conference and Trade Show, Volume 1 Chapter 11: MEMS Design and Application
	Design and fabrication of an integrated CMOS-MEMS 3-axis accelerometer
Authors:	H. Xie, G.K. Fedder, Z. Pan and W. Frey
Affilation:	University of Florida, US
Pages:	292 - 295
Keywords:	CMOS-MEMS, accelerometer, 3-axis
Abstract:	This paper reports a novel single structure, three-axis sensing accelerometer based on post-CMOS process. The resultant device incorporates both thin-film structures and bulk Si structures to achieve three-axis acceleration sensing without extra front-side lithography, or wafer bonding, which are required by other CMOS three-axis accelerometers. Behavioral simulation using NODAS and FEM simulation were used to validate the design. The overall structure size is about 1mm by 1mm. Noise floor of 0.1 mG/rtHz is expected in all three axes. Characterization is ongoing.
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ISBN:	0-9728422-0-9
Pages:	560
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