Nano Science and Technology Institute
MSM 99
MSM 99
Technical Proceedings of the 1999 International Conference on Modeling and Simulation of Microsystems
 
Chapter 7: Equivalent Circuits, Behavioral and Multilevel Simulation
 

A Compact Model for an IC Lateral Diffused MOSFET Using the Lumped-Charge Methodology

Authors:Y. Subramanian, P.O. Lauritzen and K.R. Green
Affilation:Texas Instruments, US
Pages:284 - 288
Keywords:LDMOS Model, Lumped-Charge, Power, MOSFET
Abstract:A compact model for an IC Lateral Diffused MOSFET is developed using the Lumped-Charge Methodology[1]. Model equations and key performance characteristics are documented. They satisfy the requirements of Power MOSFET models[2], unlike the competitive macromodels developed from short-channel, low-power MOSFET models.
A Compact Model for an IC Lateral Diffused MOSFET Using the Lumped-Charge MethodologyView PDF of paper
ISBN:0-9666135-4-6
Pages:697
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