A Compact Model for an IC Lateral Diffused MOSFET Using the Lumped-Charge Methodology

	MSM 99 Technical Proceedings of the 1999 International Conference on Modeling and Simulation of Microsystems Chapter 7: Equivalent Circuits, Behavioral and Multilevel Simulation
	A Compact Model for an IC Lateral Diffused MOSFET Using the Lumped-Charge Methodology
Authors:	Y. Subramanian, P.O. Lauritzen and K.R. Green
Affilation:	Texas Instruments, US
Pages:	284 - 288
Keywords:	LDMOS Model, Lumped-Charge, Power, MOSFET
Abstract:	A compact model for an IC Lateral Diffused MOSFET is developed using the Lumped-Charge Methodology[1]. Model equations and key performance characteristics are documented. They satisfy the requirements of Power MOSFET models[2], unlike the competitive macromodels developed from short-channel, low-power MOSFET models.
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ISBN:	0-9666135-4-6
Pages:	697
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