Authors: Y. Subramanian, P.O. Lauritzen and K.R. Green
Affilation: Texas Instruments, United States
Pages: 284 - 288
Keywords: LDMOS Model, Lumped-Charge, Power, MOSFET
A compact model for an IC Lateral Diffused MOSFET is developed using the Lumped-Charge Methodology. Model equations and key performance characteristics are documented. They satisfy the requirements of Power MOSFET models, unlike the competitive macromodels developed from short-channel, low-power MOSFET models.