Long M.K, Burdick J.W., Antonsson E.K.
California Institute of Technology, US
Keywords: anisotropic etching, bulk etching, compensation structures, wet etching
Due to the highly anisotropic behavior of ilicon bulk etching,there have been many publications on etch simulation and convex corner compensation for specific geometries. Our previous work introduced a general framework for algorithmically synthesizing mask layouts for wet etching.This paper extends that work to broader classes of corner compensation and demonstrates the encoding of a specific compensation structure uch that it may be used with other orientation or process parameters.
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 1999 International Conference on Modeling and Simulation of Microsystems
Published: April 19, 1999
Pages: 124 - 127
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9666135-4-6