Authors: N.M. Wilson, S. Liang, P.M. Pinsky and R.W. Dutton
Affilation: Stanford University, United States
Pages: 120 - 123
Keywords: micro-electro-mechanical systems (MEMS), geometry, process simulation
This paper details a technique that exploits domain decom-position and utilizes a combination of 1-D, 2-D, and 3-D process simulation to build physically accurate geometry of micro-electro-mechanical systems (MEMS) for simula-tion. The size and aspect ratios of typical MEMS structures differ significantly from those traditionally found in the VLSI community. This spatial stiffness makes it difficult to construct a geometry model using standard process simula-tion tools. The domain decomposition technique is an auto-mated process that uses process flow, mask layouts, and a set of heuristics to determine which regions on the wafer require 1-D, 2-D, and 3-D simulation. The appropriate order of simulation is then performed and the results are automatically combined to create a useful geometry which can be used for simulation of behavior.