A Novel Method to Utilize Existing TCAD Tools to Build Accurate Geometry Required for MEMS Simulation

	MSM 99 Technical Proceedings of the 1999 International Conference on Modeling and Simulation of Microsystems Chapter 4: Process Modeling
	A Novel Method to Utilize Existing TCAD Tools to Build Accurate Geometry Required for MEMS Simulation
Authors:	N.M. Wilson, S. Liang, P.M. Pinsky and R.W. Dutton
Affilation:	Stanford University, US
Pages:	120 - 123
Keywords:	micro-electro-mechanical systems (MEMS), geometry, process simulation
Abstract:	This paper details a technique that exploits domain decom-position and utilizes a combination of 1-D, 2-D, and 3-D process simulation to build physically accurate geometry of micro-electro-mechanical systems (MEMS) for simula-tion. The size and aspect ratios of typical MEMS structures differ significantly from those traditionally found in the VLSI community. This spatial stiffness makes it difficult to construct a geometry model using standard process simula-tion tools. The domain decomposition technique is an auto-mated process that uses process flow, mask layouts, and a set of heuristics to determine which regions on the wafer require 1-D, 2-D, and 3-D simulation. The appropriate order of simulation is then performed and the results are automatically combined to create a useful geometry which can be used for simulation of behavior.
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ISBN:	0-9666135-4-6
Pages:	697
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