Authors: K.J. Plucinski, F. Lhomme and I.V. Kityk
Affilation: Military University of Technology, Poland
Pages: 83 - 86
Keywords: amorphous thin films, silicon oxynitride
Using ab initio molecular dynamics simulation with simultaneous quantum chemical calculations we propose a new experimental method of contact-less control of the O/N ratio in SiON films on Si<111> surfaces. The proposed method consists of direct measurements of reflected light coefficients for the parallel Rp and perpendicular Rs light polarizations in relation to the Si<111> plane. We have shown that the spectral dependence of the anisotropic ratio P=Rs/Rp is closely connected to the O/N ratio. Independently performed experimental spectra measurements correspond well with experimental data. We demonstrate significant advantages over ellipsometry, XPS and other measurements both in precision as well as in technical implementation.