Authors: Y. Zhang and Y. Zhang
Affilation: Xidian University, China
Pages: 79 - 82
Keywords: silicon carbide, Monte Carlo, velocity overshoot, electron transport
The physical model used in Monte Carlo simulation is developed considering the energy gap structures and the main scattering mechanisms in details. The static electron transport in the material 3C-SiC is analyzed by single particle Monte Carlo method at high field and high temperature. The results show the excellent high field and high temperature properties of the material. The scattering mechanisms at high temperature and high field are discussed by the analysis of the results. The calculations based on the ensemble Monte Carlo procedure reveal a velocity overshoot at different temperature.