Nano Science and Technology Institute
MSM 99
MSM 99
Technical Proceedings of the 1999 International Conference on Modeling and Simulation of Microsystems
 
Chapter 12: Semiconductor Device Modeling
 

A Predictive Length-Dependent Saturation Current Model Based on Accurate Threshold Voltage Modeling

Authors:K.Y. Lim, X. Zhou and D. Lim
Affilation:Nanyang Technological University, SG
Pages:423 - 426
Keywords:Saturation current, threshold voltage, short-channel effect, compact modeling, process correlation
Abstract:This paper presents a compact length-dependent saturation current (Idsat) model for deep-submicron MOSFETs based on accurate modeling of the threshold voltabe (Vth). The proposed unified model has considered all the important two-dimensional (2-D) short-channel effects, such as Vth roll-up and roll-off, drain induced barrier lowering (DIBL), transverse-field mobility degradation and series resistance. The unique feature of the compact model is its ability to correlate to process variations such as implantation dose and energy. The model is verified with measured Idsat data for various bias conditions and process splt-run.
A Predictive Length-Dependent Saturation Current Model Based on Accurate Threshold Voltage ModelingView PDF of paper
ISBN:0-9666135-4-6
Pages:697
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