Authors: M. Stockinger, R. Strasser, R. Plasun, A. Wild and S. Selberherr
Affilation: TU Vienna, Austria
Pages: 411 - 414
Keywords: optimization, simulation, MOSFET, low-power, asymmetric channel doping
We present a new closed-loop simulation-based optimization process for a 100 nm MOSFET for portable systems such as subscriber units for wireless communications, yielding an almost double drive performance at equivalent stand-by power when compared to conventional uniformly-doped structures. A discretization of the acceptor doping profile is performed to obtain a set of optimization parameters and a global optimization target is defined which, when minimized, maximizes the drive current while keeping the drain-source leakage current in the vicinity of1pA=m. The optimized doping profile exhibits two regions which dominate the device performance. To obtain a simpler doping profile characterization a second optimization process is performed with two Gaussian implantation models. General device design guidelines are given featuring high drive and low leakage current, building on the advantages of the asymmetric device structures.