Nano Science and Technology Institute
MSM 99
MSM 99
Technical Proceedings of the 1999 International Conference on Modeling and Simulation of Microsystems
Chapter 12: Semiconductor Device Modeling

An Analytical Field Effect Mobility Model of N- and P-Channel Poly-Si TFTs

Authors:J. Kung
Affilation:National Lienho College of Technology and Commerce, TW
Pages:447 - 448
Keywords:analytical field mobility model, Poly-Si, TFT
Abstract:An analytical mobility model of the polysilicon (Poly-Si) TFT is important for the design and analysis of display arrays. These transistors can be used both as switching and driving components. Jacunski et al. [1] used an empirical model to explain the mobility behavior of n-channel Poly-Si TFTs. However p-channel devices and the mobility deterioration at large gate to source biases have not been emphasized. We consider that the scattering of Poly-Si TFTs occurs due to defects present in the grain interior, and at grain boundaries, and surface roughness.
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