Authors: J. Furlan, Z. Gorup, F. Smole and M. Topic
Affilation: University of Ljublijana, Slovenia
Pages: 443 - 446
Keywords: amorphous silicon, tunnelling, GR model
A theoretical model of lateral transport of charge carriers in pn a-Si:H junctions with high built-in electric fields is proposed in which the transport of carriers is treated in a similar way to capture-emission transitions in the SRH generation-recombination approach. In this way, the tunnelling rates from transport edges to traps are expressed by an enhanced capture cross-section which strongly affects capture and emission rates of electrons and holes. The tunnelling and thermal capture and emission of carriers to and from localized states determine the occupancy function in the mobility gap of a-Si:H. Generation recombination dynamics are then expresssed by virtue of occupancy function and the continuous distribution of states in the gap of a-Si:H.