Nano Science and Technology Institute
MSM 99
MSM 99
Technical Proceedings of the 1999 International Conference on Modeling and Simulation of Microsystems
Chapter 12: Semiconductor Device Modeling

Measuring and Characterizing Sub-Micron Short Channel LDD MOSFETs

Authors:P.C. Liu and H. Lin
Affilation:Nanyang Technological University, SG
Pages:439 - 442
Keywords:modeling, lightly doped drain, LDD, effective channel length, source and drain series resistance
Abstract:An efficient model for accurate predication of the I-V characteristics of submicrometer LDD MOSFET is described in this paper. The model is based on n-th power law model[1] by treating the effective electrical channel length and source-drain external resistance as gate bias dependent in the LDD MOSFET. On the other hand, our experiment shows that the channel length modulation (VBS=0v) also to be gate-bias dependent. Through these improvement: gate-bias dependent, and remodeled, comparison between the measured and modeled I-V characteristics shows excellent agreement for a wide range of channel lengths and biases
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