MSM 99
MSM 99
Technical Proceedings of the 1999 International Conference on Modeling and Simulation of Microsystems

Semiconductor Device Modeling Chapter 12

Measuring and Characterizing Sub-Micron Short Channel LDD MOSFETs

Authors: P.C. Liu and H. Lin

Affilation: Nanyang Technological University, Singapore

Pages: 439 - 442

Keywords: modeling, lightly doped drain, LDD, effective channel length, source and drain series resistance

Abstract:
An efficient model for accurate predication of the I-V characteristics of submicrometer LDD MOSFET is described in this paper. The model is based on n-th power law model[1] by treating the effective electrical channel length and source-drain external resistance as gate bias dependent in the LDD MOSFET. On the other hand, our experiment shows that the channel length modulation (VBS=0v) also to be gate-bias dependent. Through these improvement: gate-bias dependent, and remodeled, comparison between the measured and modeled I-V characteristics shows excellent agreement for a wide range of channel lengths and biases

Measuring and Characterizing Sub-Micron Short Channel LDD MOSFETs

ISBN: 0-9666135-4-6
Pages: 697