Liu P.C., Lin H.
Nanyang Technological University, SG
Keywords: drain series resistance, effective channel length, LDD, lightly doped drain, modeling, source
An efficient model for accurate predication of the I-V characteristics of submicrometer LDD MOSFET is described in this paper. The model is based on n-th power law model[1] by treating the effective electrical channel length and source-drain external resistance as gate bias dependent in the LDD MOSFET. On the other hand, our experiment shows that the channel length modulation (VBS=0v) also to be gate-bias dependent. Through these improvement: gate-bias dependent, and remodeled, comparison between the measured and modeled I-V characteristics shows excellent agreement for a wide range of channel lengths and biases
Journal: TechConnect Briefs
Volume: Technical Proceedings of the 1999 International Conference on Modeling and Simulation of Microsystems
Published: April 19, 1999
Pages: 439 - 442
Industry sector: Sensors, MEMS, Electronics
Topic: Modeling & Simulation of Microsystems
ISBN: 0-9666135-4-6