MSM 99
MSM 99
Technical Proceedings of the 1999 International Conference on Modeling and Simulation of Microsystems

Semiconductor Device Modeling Chapter 12

Implementation of Strain Induced Effects in Sensor Device Simulation

Authors: K. Matsuda and Y. Kanda

Affilation: Naruto University of Education, Japan

Pages: 431 - 434

Keywords: sensor, device simulation, PDE, piezeresistance, stress, impurity

Abstract:
Device simulation technique is applied to the piezoresistive sensor by including the doping profile and the strain distribution in the silicon substrate. In this simulation, the device equations are solved by Newton's method taking into account the anisotropic mobilities of carriers induced by strain, which results in afecting the change of the carriers concentrations at each node. Simulation is done through an algorithm devel-oped in 'SGFramework'. Modeling of the implementation of strain induced effects in the device simulation is shown and its feasibility is discussed.

Implementation of Strain Induced Effects in Sensor Device Simulation

ISBN: 0-9666135-4-6
Pages: 697