Authors: A. Zemliak, C. Celaya and R. Garcia
Affilation: Puebla Autonomous University, Mexico
Pages: 427 - 430
Keywords: Semiconductor microwave devices, modeling and simulation, numerical methods, structure optimization
On the basis of an IMPATT diode complex mathematical model and an optimization procedure, results are presented for a diode structure analysis and optimization suitable for a pulsed-mode 2 mm silicon diode. The complex model includes the electrical model based on continuity equations and thermal model based on the thermoconductivity equation solution. The energy characteristics of the semiconductor structures for high-power pulsed IMPATT diodes with a permanent and complex doping profile are optimized.