MSM 99
MSM 99
Technical Proceedings of the 1999 International Conference on Modeling and Simulation of Microsystems

Semiconductor Device Modeling Chapter 12

Structure Optimization of 140 GHz Pulsed-Mode IMPATT Diode

Authors: A. Zemliak, C. Celaya and R. Garcia

Affilation: Puebla Autonomous University, Mexico

Pages: 427 - 430

Keywords: Semiconductor microwave devices, modeling and simulation, numerical methods, structure optimization

Abstract:
On the basis of an IMPATT diode complex mathematical model and an optimization procedure, results are presented for a diode structure analysis and optimization suitable for a pulsed-mode 2 mm silicon diode. The complex model includes the electrical model based on continuity equations and thermal model based on the thermoconductivity equation solution. The energy characteristics of the semiconductor structures for high-power pulsed IMPATT diodes with a permanent and complex doping profile are optimized.

Structure Optimization of 140 GHz Pulsed-Mode IMPATT Diode

ISBN: 0-9666135-4-6
Pages: 697