Nano Science and Technology Institute
MSM 99
MSM 99
Technical Proceedings of the 1999 International Conference on Modeling and Simulation of Microsystems
Chapter 12: Semiconductor Device Modeling

Structure Optimization of 140 GHz Pulsed-Mode IMPATT Diode

Authors:A. Zemliak, C. Celaya and R. Garcia
Affilation:Puebla Autonomous University, MX
Pages:427 - 430
Keywords:Semiconductor microwave devices, modeling and simulation, numerical methods, structure optimization
Abstract:On the basis of an IMPATT diode complex mathematical model and an optimization procedure, results are presented for a diode structure analysis and optimization suitable for a pulsed-mode 2 mm silicon diode. The complex model includes the electrical model based on continuity equations and thermal model based on the thermoconductivity equation solution. The energy characteristics of the semiconductor structures for high-power pulsed IMPATT diodes with a permanent and complex doping profile are optimized.
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