Nano Science and Technology Institute
MSM 99
MSM 99
Technical Proceedings of the 1999 International Conference on Modeling and Simulation of Microsystems
Chapter 12: Semiconductor Device Modeling

Simulation of the Frequency Limits of SiGe HBTs

Authors:J. Geßner, F. Schwierz, H. Mau, D. Nuernbergk, M. Roßberg and D. Schipanski
Affilation:Technische Universitat Ilmenau, DE
Pages:407 - 410
Keywords:SiGe HBT, hydrodynamic model, frequency limits , simulation
Abstract:The dynamic performance of SiGe HBTs in terms of the cut off frequency and the maximum frequency of oscillation is investigated by numerical device simulation. Simulations based on both the Drift Diffusion Model and the Hydrodynamic Model are carried out for a variety of different transistor structures to clarify the influence of the vertical transistor design on device performance. Based on the simulation results the validity of the Drift Diffusion Model is discussed and design criteria for RF SiGe HBTs are derived.
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