Authors: V. Palankovski, B. Gonzalez, H. Kosina, A. Hernandez and S. Selberherr
Affilation: TU Vienna, Austria
Pages: 395 - 398
Keywords: energy relaxation time, simulation, models, compounds, devices
We present an empirical model for the electron energy relaxation time. It is based on Monte-Carlo simulation results and is applicable to all relevant diamond and zinc-blende structure semiconductors. The energy relaxation times are expressed as functions of the carrier and lattice temperatures, and in the case of semiconductor alloys, of the material composition.