Nano Science and Technology Institute
MSM 99
MSM 99
Technical Proceedings of the 1999 International Conference on Modeling and Simulation of Microsystems
 
Chapter 12: Semiconductor Device Modeling
 

A New Analytical Energy Relaxation Time Model for Device Simulation

Authors:V. Palankovski, B. Gonzalez, H. Kosina, A. Hernandez and S. Selberherr
Affilation:TU Vienna, AT
Pages:395 - 398
Keywords:energy relaxation time, simulation, models, compounds, devices
Abstract:We present an empirical model for the electron energy relaxation time. It is based on Monte-Carlo simulation results and is applicable to all relevant diamond and zinc-blende structure semiconductors. The energy relaxation times are expressed as functions of the carrier and lattice temperatures, and in the case of semiconductor alloys, of the material composition.
A New Analytical Energy Relaxation Time Model for Device SimulationView PDF of paper
ISBN:0-9666135-4-6
Pages:697
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