MSM 99
MSM 99
Technical Proceedings of the 1999 International Conference on Modeling and Simulation of Microsystems

Semiconductor Device Modeling Chapter 12

A New Analytical Energy Relaxation Time Model for Device Simulation

Authors: V. Palankovski, B. Gonzalez, H. Kosina, A. Hernandez and S. Selberherr

Affilation: TU Vienna, Austria

Pages: 395 - 398

Keywords: energy relaxation time, simulation, models, compounds, devices

Abstract:
We present an empirical model for the electron energy relaxation time. It is based on Monte-Carlo simulation results and is applicable to all relevant diamond and zinc-blende structure semiconductors. The energy relaxation times are expressed as functions of the carrier and lattice temperatures, and in the case of semiconductor alloys, of the material composition.

A New Analytical Energy Relaxation Time Model for Device Simulation

ISBN: 0-9666135-4-6
Pages: 697