A New Analytical Energy Relaxation Time Model for Device Simulation

	MSM 99 Technical Proceedings of the 1999 International Conference on Modeling and Simulation of Microsystems Chapter 12: Semiconductor Device Modeling
	A New Analytical Energy Relaxation Time Model for Device Simulation
Authors:	V. Palankovski, B. Gonzalez, H. Kosina, A. Hernandez and S. Selberherr
Affilation:	TU Vienna, AT
Pages:	395 - 398
Keywords:	energy relaxation time, simulation, models, compounds, devices
Abstract:	We present an empirical model for the electron energy relaxation time. It is based on Monte-Carlo simulation results and is applicable to all relevant diamond and zinc-blende structure semiconductors. The energy relaxation times are expressed as functions of the carrier and lattice temperatures, and in the case of semiconductor alloys, of the material composition.
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ISBN:	0-9666135-4-6
Pages:	697
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