 | MSM 99
Technical Proceedings of the 1999 International Conference on Modeling and Simulation of Microsystems
Chapter 12: Semiconductor Device Modeling |
| - | Modelling an NMR Probe for Magnetometry |
| | G. Boero, D. Schlaefli, P.A. Besse and R.S. Popovic |
| | Swiss Federal Institute of Technology, Switzerland |
| - | A New Analytical Energy Relaxation Time Model for Device Simulation |
| | V. Palankovski, B. Gonzalez, H. Kosina, A. Hernandez and S. Selberherr |
| | TU Vienna, Austria |
| - | Impact of Heat Source Localization on Conduction Cooling of Silicon-on-Insulator Devices |
| | P.G. Sverdrup, Y.S. Ju and K.E. Goodson |
| | Stanford University, U.S.A. |
| - | Offset Analysis in CMOS Magnetotransistors by Numerical Simulation |
| | M. Metz and H. Baltes |
| | ETH Zürich, Switzerland |
| - | Simulation of the Frequency Limits of SiGe HBTs |
| | J. Geßner, F. Schwierz, H. Mau, D. Nuernbergk, M. Roßberg and D. Schipanski |
| | Technische Universitat Ilmenau, Germany |
| - | Closed-Loop MOSFET Doping Profile Optimization for Portable Systems |
| | M. Stockinger, R. Strasser, R. Plasun, A. Wild and S. Selberherr |
| | TU Vienna, Austria |
| - | Three-Dimensional Multi-Grid Poisson Solver for Modeling Semiconductor Devices |
| | S.J. Wigger, M. Saraniti and S.M. Goodnick |
| | Arizona State University, U.S.A. |
| - | Simulation of the Piezo-Tunnel Effect |
| | A.P. Friedrich, P.A. Besse, M. Bächtold and R.S. Popovic |
| | Swiss Federal Institute of Technology of Lausanne, Switzerland |
| - | A Predictive Length-Dependent Saturation Current Model Based on Accurate Threshold Voltage Modeling |
| | K.Y. Lim, X. Zhou and D. Lim |
| | Nanyang Technological University, Singapore |
| - | Structure Optimization of 140 GHz Pulsed-Mode IMPATT Diode |
| | A. Zemliak, C. Celaya and R. Garcia |
| | Puebla Autonomous University, Mexico |
| - | Implementation of Strain Induced Effects in Sensor Device Simulation |
| | K. Matsuda and Y. Kanda |
| | Naruto University of Education, Japan |
| - | Self Aligned Gate JFETs for Smart MEMS |
| | S. Amon, D. Vrtacnik, D. Resnik, D. Krizaj, U. Aljancic and A. Levstek |
| | University of Ljubljana, Slovenia |
| - | Measuring and Characterizing Sub-Micron Short Channel LDD MOSFETs |
| | P.C. Liu and H. Lin |
| | Nanyang Technological University, Singapore |
| - | Modelling High Built-In Electric Field Effects on Generation-Recombination Rates in Space-Charge Regions of pn a-Si:H Junctions |
| | J. Furlan, Z. Gorup, F. Smole and M. Topic |
| | University of Ljublijana, Slovenia |
| - | An Analytical Field Effect Mobility Model of N- and P-Channel Poly-Si TFTs |
| | J. Kung |
| | National Lienho College of Technology and Commerce, Taiwan |
| - | Modelling an NMR Probe for Magnetometry |
| | G. Boero, D. Schlaefli, P.A. Besse and R.S. Popovic |
| | Swiss Federal Institute of Technology, Switzerland |
| - | A New Analytical Energy Relaxation Time Model for Device Simulation |
| | V. Palankovski, B. Gonzalez, H. Kosina, A. Hernandez and S. Selberherr |
| | TU Vienna, Austria |
| - | Impact of Heat Source Localization on Conduction Cooling of Silicon-on-Insulator Devices |
| | P.G. Sverdrup, Y.S. Ju and K.E. Goodson |
| | Stanford University, U.S.A. |
| - | Offset Analysis in CMOS Magnetotransistors by Numerical Simulation |
| | M. Metz and H. Baltes |
| | ETH Zürich, Switzerland |
| - | Simulation of the Frequency Limits of SiGe HBTs |
| | J. Geßner, F. Schwierz, H. Mau, D. Nuernbergk, M. Roßberg and D. Schipanski |
| | Technische Universitat Ilmenau, Germany |
| - | Closed-Loop MOSFET Doping Profile Optimization for Portable Systems |
| | M. Stockinger, R. Strasser, R. Plasun, A. Wild and S. Selberherr |
| | TU Vienna, Austria |
| - | Three-Dimensional Multi-Grid Poisson Solver for Modeling Semiconductor Devices |
| | S.J. Wigger, M. Saraniti and S.M. Goodnick |
| | Arizona State University, U.S.A. |
| - | Simulation of the Piezo-Tunnel Effect |
| | A.P. Friedrich, P.A. Besse, M. Bächtold and R.S. Popovic |
| | Swiss Federal Institute of Technology of Lausanne, Switzerland |
| - | A Predictive Length-Dependent Saturation Current Model Based on Accurate Threshold Voltage Modeling |
| | K.Y. Lim, X. Zhou and D. Lim |
| | Nanyang Technological University, Singapore |
| - | Structure Optimization of 140 GHz Pulsed-Mode IMPATT Diode |
| | A. Zemliak, C. Celaya and R. Garcia |
| | Puebla Autonomous University, Mexico |
| - | Implementation of Strain Induced Effects in Sensor Device Simulation |
| | K. Matsuda and Y. Kanda |
| | Naruto University of Education, Japan |
| - | Self Aligned Gate JFETs for Smart MEMS |
| | S. Amon, D. Vrtacnik, D. Resnik, D. Krizaj, U. Aljancic and A. Levstek |
| | University of Ljubljana, Slovenia |
| - | Measuring and Characterizing Sub-Micron Short Channel LDD MOSFETs |
| | P.C. Liu and H. Lin |
| | Nanyang Technological University, Singapore |
| - | Modelling High Built-In Electric Field Effects on Generation-Recombination Rates in Space-Charge Regions of pn a-Si:H Junctions |
| | J. Furlan, Z. Gorup, F. Smole and M. Topic |
| | University of Ljublijana, Slovenia |
| - | An Analytical Field Effect Mobility Model of N- and P-Channel Poly-Si TFTs |
| | J. Kung |
| | National Lienho College of Technology and Commerce, Taiwan |
| ISBN: | 0-9666135-4-6 |
| Pages: | 697 |
| Hardcopy: | $100.00 |
| Special: | 3 CD Set — 15% off with Free Shipping |
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