MSM 99
MSM 99
Technical Proceedings of the 1999 International Conference on Modeling and Simulation of Microsystems

Semiconductor Device Modeling Chapter 12

Modelling an NMR Probe for Magnetometry
G. Boero, D. Schlaefli, P.A. Besse and R.S. Popovic
Swiss Federal Institute of Technology, CH

A New Analytical Energy Relaxation Time Model for Device Simulation
V. Palankovski, B. Gonzalez, H. Kosina, A. Hernandez and S. Selberherr
TU Vienna, AT

Impact of Heat Source Localization on Conduction Cooling of Silicon-on-Insulator Devices
P.G. Sverdrup, Y.S. Ju and K.E. Goodson
Stanford University, US

Offset Analysis in CMOS Magnetotransistors by Numerical Simulation
M. Metz and H. Baltes
ETH Zürich, CH

Simulation of the Frequency Limits of SiGe HBTs
J. Geßner, F. Schwierz, H. Mau, D. Nuernbergk, M. Roßberg and D. Schipanski
Technische Universitat Ilmenau, DE

Closed-Loop MOSFET Doping Profile Optimization for Portable Systems
M. Stockinger, R. Strasser, R. Plasun, A. Wild and S. Selberherr
TU Vienna, AT

Three-Dimensional Multi-Grid Poisson Solver for Modeling Semiconductor Devices
S.J. Wigger, M. Saraniti and S.M. Goodnick
Arizona State University, US

Simulation of the Piezo-Tunnel Effect
A.P. Friedrich, P.A. Besse, M. Bächtold and R.S. Popovic
Swiss Federal Institute of Technology of Lausanne, CH

A Predictive Length-Dependent Saturation Current Model Based on Accurate Threshold Voltage Modeling
K.Y. Lim, X. Zhou and D. Lim
Nanyang Technological University, SG

Structure Optimization of 140 GHz Pulsed-Mode IMPATT Diode
A. Zemliak, C. Celaya and R. Garcia
Puebla Autonomous University, MX

Implementation of Strain Induced Effects in Sensor Device Simulation
K. Matsuda and Y. Kanda
Naruto University of Education, JP

Self Aligned Gate JFETs for Smart MEMS
S. Amon, D. Vrtacnik, D. Resnik, D. Krizaj, U. Aljancic and A. Levstek
University of Ljubljana, SI

Measuring and Characterizing Sub-Micron Short Channel LDD MOSFETs
P.C. Liu and H. Lin
Nanyang Technological University, SG

Modelling High Built-In Electric Field Effects on Generation-Recombination Rates in Space-Charge Regions of pn a-Si:H Junctions
J. Furlan, Z. Gorup, F. Smole and M. Topic
University of Ljublijana, SI

An Analytical Field Effect Mobility Model of N- and P-Channel Poly-Si TFTs
J. Kung
National Lienho College of Technology and Commerce, TW


ISBN: 0-9666135-4-6
Pages: 697