An Overview of the 3D Simulation Efforts at Arizona State University Directed Towards Understanding Transport in the Quantum Dots and the Ultra-Small Devices of the Future

	MSM 99 Technical Proceedings of the 1999 International Conference on Modeling and Simulation of Microsystems Chapter 11: Quantum Device Modeling
	An Overview of the 3D Simulation Efforts at Arizona State University Directed Towards Understanding Transport in the Quantum Dots and the Ultra-Small Devices of the Future
Authors:	R. Akis, D. Vasileska and D.K. Ferry
Affilation:	Arizona State University, US
Pages:	384 - 387
Keywords:	scaled Si-MOSFETs, discrete impurities, thres-hold voltage, quantum dots, ballistic transport
Abstract:	A brief summary of some of the simulation efforts within the Nanostructure Research Group at Arizona State University is presented, with emphasis on the tools used for modeling deep-submicrometer devices and quantum dot structures under low bias conditions. The results obtained with our 3D drift-diffusion simulator for 0.1 mm n-channel MOSFETs show that the atomistic nature of the impurity atoms has significant influence on the device transfer charac-teristics. In the case of quantum dot structures, we find that the level quantization is preserved even as the dot is opened, but that there is a selection of particular eigenstates that depends strongly on the positions of the contacts
	View PDF of paper
ISBN:	0-9666135-4-6
Pages:	697
Up