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 | MSM 99
Technical Proceedings of the 1999 International Conference on Modeling and Simulation of Microsystems
Chapter 11: Quantum Device Modeling |
| | An Overview of the 3D Simulation Efforts at Arizona State University Directed Towards Understanding Transport in the Quantum Dots and the Ultra-Small Devices of the Future | | Authors: | R. Akis, D. Vasileska and D.K. Ferry | | Affilation: | Arizona State University, U.S.A. | | Pages: | 384 - 387 | | Keywords: | scaled Si-MOSFETs, discrete impurities, thres-hold voltage, quantum dots, ballistic transport | | Abstract: | A brief summary of some of the simulation efforts within the Nanostructure Research Group at Arizona State University is presented, with emphasis on the tools used for modeling deep-submicrometer devices and quantum dot structures under low bias conditions. The results obtained with our 3D drift-diffusion simulator for 0.1 mm n-channel MOSFETs show that the atomistic nature of the impurity atoms has significant influence on the device transfer charac-teristics. In the case of quantum dot structures, we find that the level quantization is preserved even as the dot is opened, but that there is a selection of particular eigenstates that depends strongly on the positions of the contacts |  | View paper | | ISBN: | 0-9666135-4-6 |
| Pages: | 697 |
| Hardcopy: | $100.00 |
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