Authors: A. Hössinger and S. Selberherr
Affilation: TU Vienna, Austria
Pages: 363 - 366
Keywords: ion implantation, damage, Monte-Carlo simulation
We present a Monte-Carlo ion implantation simulation method that allows a very accurate prediction of implantation induced point defects, generation of amorphous areas, and impurity distributions. The implanted impurity profiles can be calculated as well as the distributions of impurities that are moved from one material to another during the implantation process. The simulation method can be applied to three dimensional device structures consisting of various materials. The accuracy of the simulated profiles is evaluated by comparing impurity profiles with SIMS measurements and point defect profiles with RBS spectra. Finally the simulation results of a source/drain ion implantation into a three-dimensional MOS-transistor structure are shown.