Authors: M-S. Son, H-J. Hwang
Affilation: Chung-Ang University, Korea
Pages: 359 - 362
Keywords: implantation, Monte Carlo simulation, accumulative damage, defect recombination, silicon
In this work, we presents a newly proposed and enhanced damage model for the accurate prediction of both as-implanted impurity and point defect profiles in Monte Carlo simulation of ion implantation in (100) crystalline silicon. For the damage accumulation, we considered the self-annealing effects by introducing our proposed non-linear recombination probability function of each point defect for the computationally efficiency in fully simulated dynamic model. Our damage model shows very reasonable agreement with the experiments for the damage and the impurity profiles.