Linking of Atomistic Modeling to Macroscopic Behavior for Front End Processes
Authors:
S.T. Dunham
Affilation:
Boston University, U.S.A.
Pages:
355 - 358
Keywords:
diffusion, point defects, lattice Monte Carlo, transient enhanced diffusion, extended defects
Abstract:
In this work, we review efforts to make effective use of atomistic calculations for the advancement of VLSI process simulation. We focus on front-end processes such as defect mediated dopant diffusion which play a large role in determining device behavior.
