Authors: S.T. Dunham
Affilation: Boston University, United States
Pages: 355 - 358
Keywords: diffusion, point defects, lattice Monte Carlo, transient enhanced diffusion, extended defects
In this work, we review efforts to make effective use of atomistic calculations for the advancement of VLSI process simulation. We focus on front-end processes such as defect mediated dopant diffusion which play a large role in determining device behavior.