Implant and Diffusion Modeling

	MSM 99 Technical Proceedings of the 1999 International Conference on Modeling and Simulation of Microsystems Chapter 10: Implant and Diffusion Modeling
-	Linking of Atomistic Modeling to Macroscopic Behavior for Front End Processes
	S.T. Dunham
	Boston University, US
-	Modeling and Simulation of Non-Linear Damage Growth During Ion Implants in Silicon
	M-S. Son, H-J. Hwang
	Chung-Ang University, KR
-	Accurate Three-Dimensional Simulation of Damage Caused by Ion Implantation
	A. Hössinger and S. Selberherr
	TU Vienna, AT
-	Ab-Initio TCAD Models of Dopant Diffusion in Silicon
	J.S. Nelson, A.F. Wright and P.A. Schultz
	Sandia National Laboratory, US
-	Ab-Initio Pseudopotential Calculations of Boron Diffusion in Silicon
	W. Windl, R. Stumpf, M. Masquelier, M. Bunea and S.T. Dunham
	Motorola, US
ISBN:	0-9666135-4-6
Pages:	697
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