 | MSM 99
Technical Proceedings of the 1999 International Conference on Modeling and Simulation of Microsystems
Chapter 10: Implant and Diffusion Modeling |
| - | Linking of Atomistic Modeling to Macroscopic Behavior for Front End Processes |
| | S.T. Dunham |
| | Boston University, U.S.A. |
| - | Modeling and Simulation of Non-Linear Damage Growth During Ion Implants in Silicon |
| | M-S. Son, H-J. Hwang |
| | Chung-Ang University, Korea |
| - | Accurate Three-Dimensional Simulation of Damage Caused by Ion Implantation |
| | A. Hössinger and S. Selberherr |
| | TU Vienna, Austria |
| - | Ab-Initio TCAD Models of Dopant Diffusion in Silicon |
| | J.S. Nelson, A.F. Wright and P.A. Schultz |
| | Sandia National Laboratory, U.S.A. |
| - | Ab-Initio Pseudopotential Calculations of Boron Diffusion in Silicon |
| | W. Windl, R. Stumpf, M. Masquelier, M. Bunea and S.T. Dunham |
| | Motorola, U.S.A. |
| - | Linking of Atomistic Modeling to Macroscopic Behavior for Front End Processes |
| | S.T. Dunham |
| | Boston University, U.S.A. |
| - | Modeling and Simulation of Non-Linear Damage Growth During Ion Implants in Silicon |
| | M-S. Son, H-J. Hwang |
| | Chung-Ang University, Korea |
| - | Accurate Three-Dimensional Simulation of Damage Caused by Ion Implantation |
| | A. Hössinger and S. Selberherr |
| | TU Vienna, Austria |
| - | Ab-Initio TCAD Models of Dopant Diffusion in Silicon |
| | J.S. Nelson, A.F. Wright and P.A. Schultz |
| | Sandia National Laboratory, U.S.A. |
| - | Ab-Initio Pseudopotential Calculations of Boron Diffusion in Silicon |
| | W. Windl, R. Stumpf, M. Masquelier, M. Bunea and S.T. Dunham |
| | Motorola, U.S.A. |
| ISBN: | 0-9666135-4-6 |
| Pages: | 697 |
| Hardcopy: | $100.00 |
| Special: | 3 CD Set — 15% off with Free Shipping |
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