Nano Science and Technology Institute
MSM 98
MSM 98
Technical Proceedings of the 1998 International Conference on Modeling and Simulation of Microsystems
 
Chapter 9: Applications: Semiconductors
 

The Influence of Space Quantization Effect on the Threshold Voltage, Inversion Layer and Total Gate Capacitance in Scaled Si-MOSFETs

Authors:D. Vasileska and D.K. Ferry
Affilation:Arizona State University, US
Pages:408 - 413
Keywords:Scaled Si-MOSFETs, threshold voltage, inversion layer capacitance, total gate capacitance, poly-gate depletion
Abstract:We investigate the influence of poly-gate depletion on the inversion layer capacitance CinV, total gate capacitance CtOt and threshold voltage VT in scaled Si MOSFETs using both semiclassical (SC) and quantum-mechanical (QM) description of the charge density in the channel. We also present an analytical expression for the total gate capacitance CtOt that uses SC charge description and takes into account the depletion of the poly-silicon gates. Our simulations show that poly-gate depletion has larger influence on CtOt than the QM charge description. On the contrary, VT is significantly affected by both the poly-gate depletion and the QM effects in the channel.
The Influence of Space Quantization Effect on the Threshold Voltage, Inversion Layer and Total Gate Capacitance in Scaled Si-MOSFETsView PDF of paper
ISBN:0-96661-35-0-3
Pages:678
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