Authors: K.V. Loiko, I.V. Peidous, H-M Ho and D.H. Lim
Affilation: Chartered Semiconductor Manufacturing Ltd., Singapore
Pages: 443 - 446
Keywords: LOCOS isolation, field oxide, narrow-width effect, boron segregation, pad oxide punchthrough
The anomalous threshold voltage behavior of sub-halfmicron LOCOS-isolated n-MOSFETs is explained by the segregation of boron and narrow-mask effect of local oxidation. A novel approach to simulating narrow-width effects is proposed. It combines 2-D process and device simulations and analytical calculations of the threshold voltage shift.