MSM 98
MSM 98
Technical Proceedings of the 1998 International Conference on Modeling and Simulation of Microsystems

Applications: Semiconductors Chapter 9

Simulation of Narrow-Width Effects in Sub-Half-Micron n-MOSFETs with LOCOS Isolation

Authors: K.V. Loiko, I.V. Peidous, H-M Ho and D.H. Lim

Affilation: Chartered Semiconductor Manufacturing Ltd., Singapore

Pages: 443 - 446

Keywords: LOCOS isolation, field oxide, narrow-width effect, boron segregation, pad oxide punchthrough

Abstract:
The anomalous threshold voltage behavior of sub-halfmicron LOCOS-isolated n-MOSFETs is explained by the segregation of boron and narrow-mask effect of local oxidation. A novel approach to simulating narrow-width effects is proposed. It combines 2-D process and device simulations and analytical calculations of the threshold voltage shift.

Simulation of Narrow-Width Effects in Sub-Half-Micron n-MOSFETs with LOCOS Isolation

ISBN: 0-96661-35-0-3
Pages: 678