Simulation of Narrow-Width Effects in Sub-Half-Micron n-MOSFETs with LOCOS Isolation

	MSM 98 Technical Proceedings of the 1998 International Conference on Modeling and Simulation of Microsystems Chapter 9: Applications: Semiconductors
	Simulation of Narrow-Width Effects in Sub-Half-Micron n-MOSFETs with LOCOS Isolation
Authors:	K.V. Loiko, I.V. Peidous, H-M Ho and D.H. Lim
Affilation:	Chartered Semiconductor Manufacturing Ltd., SG
Pages:	443 - 446
Keywords:	LOCOS isolation, field oxide, narrow-width effect, boron segregation, pad oxide punchthrough
Abstract:	The anomalous threshold voltage behavior of sub-halfmicron LOCOS-isolated n-MOSFETs is explained by the segregation of boron and narrow-mask effect of local oxidation. A novel approach to simulating narrow-width effects is proposed. It combines 2-D process and device simulations and analytical calculations of the threshold voltage shift.
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ISBN:	0-96661-35-0-3
Pages:	678
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