Applications: Semiconductors

	MSM 98 Technical Proceedings of the 1998 International Conference on Modeling and Simulation of Microsystems Chapter 9: Applications: Semiconductors
-	The Influence of Space Quantization Effect on the Threshold Voltage, Inversion Layer and Total Gate Capacitance in Scaled Si-MOSFETs
	D. Vasileska and D.K. Ferry
	Arizona State University, U.S.A.
-	Concurrent Process, Device and Integrated Circuit Development by Predictive Engineering for Smart Power Technologies
	M. Bafleur, T. Dinh, H. Park, R. Thoma, T. Zirkle and A. Wild
	LAAS/CNRS, France
-	Simulations of a New CMOS Compatible Method to Enhance the Breakdown Voltage of Highly-Doped Shallow PN Junctions
	A. Pauchard, P.A. Besse and R.S. Popovic
	EPFL, Switzerland
-	Hierarchical Approach to Simulation in a Vertical System for the TriCore Microcontroller
	C. Salzmann, E. Chesters, P. Coelho, Y-C Fu, J. Madala, M. Reddy and F. Wang
	Siemens Microelectronics, Inc., U.S.A.
-	A Physics-Based Characterized Model for an Ultrafast Planar Rectifier
	Z. Hossain, W. Fragale, W. Simpson and G. Dashney
	Motorola, Inc., U.S.A.
-	Cellular Automata Studies of Vertical MOSFETs
	M. Saraniti, S. Wigger, G. Zandler, G. Formicone and S.M. Goodnick
	Arizona State University, U.S.A.
-	Simulation of Narrow-Width Effects in Sub-Half-Micron n-MOSFETs with LOCOS Isolation
	K.V. Loiko, I.V. Peidous, H-M Ho and D.H. Lim
	Chartered Semiconductor Manufacturing Ltd., Singapore
-	Breakdown in the Output Characteristics of Deep Submicron, a-Si:H TFTs
	L. Colalongo, M. Valdinoci, G. Forunato, L. Mariucci and M. Rudan
	University of Bologna, Italy
ISBN:	0-96661-35-0-3
Pages:	678
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