MSM 98
MSM 98
Technical Proceedings of the 1998 International Conference on Modeling and Simulation of Microsystems

Characterization, Parameter Extraction, Calibration Chapter 5

Simple Method of Characterizing CMOS Channel Dopant Profiles Using CV Technique

Authors: D. Kapila, M. Kulkarni, C. Fernando, J. Davis, K. Vasanth and G. Pollack

Affilation: Texas Instruments, Inc., United States

Pages: 199 - 204

Keywords: channel dopant profiles, dopant redistribution, process modeling, CV

Abstract:
In CMOS process and device simulations, characterization of complete dopant profiles in the channel region is essential for accurate simulations. We have developed a simple, fast and inexpensive methodology for characterizing CMOS channel dopant profiles using analytical equations, which can be calibrated and validated easily using CV measurements. The calibrated model can predict channel dopant profiles for complex redistribution and diffusion process like dopant loss of phosphorus in PMOS devices.

Simple Method of Characterizing CMOS Channel Dopant Profiles Using CV Technique

ISBN: 0-96661-35-0-3
Pages: 678