Authors: D. Kapila, M. Kulkarni, C. Fernando, J. Davis, K. Vasanth and G. Pollack
Affilation: Texas Instruments, Inc., United States
Pages: 199 - 204
Keywords: channel dopant profiles, dopant redistribution, process modeling, CV
In CMOS process and device simulations, characterization of complete dopant profiles in the channel region is essential for accurate simulations. We have developed a simple, fast and inexpensive methodology for characterizing CMOS channel dopant profiles using analytical equations, which can be calibrated and validated easily using CV measurements. The calibrated model can predict channel dopant profiles for complex redistribution and diffusion process like dopant loss of phosphorus in PMOS devices.